Datasheet SI7456DP-TI-GE3 - Vishay MOSFET, N, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si7456DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.025 at VGS = 10 V 0.028 at VGS = 6.0 V ID (A) 9.3 8.8

Simulation Model

Specifications:

• Continuous Drain Current Id: 5.7 A
• Current Id Max: 5.7 A
• Current Temperature: 25°C
• Device Marking: SI7456DP
• Drain Source Voltage Vds: 100 V
• External Depth: 5.26 mm
• External Length / Height: 1.2 mm
• External Width: 6.2 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 1.8 °C/W
• Mounting Type: SMD
• N-channel Gate Charge: 44nC
• Number of Pins: 8
• On State Resistance Max: 25 MOhm
• On State Resistance: 8.8 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.9 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 2 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Roth Elektronik - RE932-01

Other Names:

SI7456DPTIGE3, SI7456DP TI GE3