Datasheet SI7850DP-T1-E3 - Vishay MOSFET, N, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si7850DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.022 at VGS = 10 V 0.031 at VGS = 4.5 V ID (A) 10.3 8.7

Specifications:

• Continuous Drain Current Id: 10.3 A
• Current Id Max: 10.3 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 22 MOhm
• Package / Case: SOIC PowerPAK
• Power Dissipation: 1.8 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

SI7850DPT1E3, SI7850DP T1 E3