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Datasheet SQ2360EES-T1-GE3 - Vishay MOSFET, N CH, DI & ESD, 60 V, 4.4 A, SOT23

Vishay SQ2360EES-T1-GE3

Part Number: SQ2360EES-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, DI & ESD, 60 V, 4.4 A, SOT23

data sheetDownload Data Sheet

Docket:
SQ2360EES
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration

Specifications:

  • Continuous Drain Current Id: 4.4 A
  • Drain Source Voltage Vds: 60 V
  • Number of Pins: 3
  • On State Resistance: 0.058 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 3 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-236
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Other Names:

SQ2360EEST1GE3, SQ2360EES T1 GE3

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