Datasheet SI7898DP-T1-E3 - Vishay N CHANNEL MOSFET, 150 V, 4.8 A, SOIC
Part Number: SI7898DP-T1-E3
Detailed Description
Manufacturer: Vishay
Description: N CHANNEL MOSFET, 150 V, 4.8 A, SOIC
Specifications:
- Continuous Drain Current Id: 4.8 A
- Drain Source Voltage Vds: 150 V
- On Resistance Rds(on): 95 MOhm
- Rds(on) Test Voltage Vgs: 20 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Polarity: N Channel
RoHS: Y-Ex
Other Names:
SI7898DPT1E3, SI7898DP T1 E3
