Datasheet SIE812DF-T1-GE3 - Vishay N CHANNEL MOSFET, 40 V, 60 A POLARPAK

Vishay SIE812DF-T1-GE3

Part Number: SIE812DF-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 40 V, 60 A POLARPAK

data sheetDownload Data Sheet

Docket:
SiE812DF
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
ID (A)a VDS (V) 40 RDS(on) ()e 0.0026 at VGS = 10 V 0.0034 at VGS = 4.5 V Silicon Limit 163 143 Package Qg (Typ.) Limit 60 52 nC 60

Specifications:

  • Continuous Drain Current Id: 60 A
  • Drain Source Voltage Vds: 40 V
  • On Resistance Rds(on): 3.4 MOhm
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2.3 V
  • Transistor Polarity: N Channel

RoHS: Y-Ex

Other Names:

SIE812DFT1GE3, SIE812DF T1 GE3

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