Datasheet SI4850EY - Vishay MOSFET, N, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Docket:
Si4850EY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)

Simulation Model

Specifications:

• Continuous Drain Current Id: 6 A
• Current Id Max: 6 A
• Drain Source Voltage Vds: 60 V
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 18nC
• Number of Pins: 8
• Number of Transistors: 1
• On Resistance Rds(on): 22 MOhm
• On State Resistance @ Vgs = 4.5V: 31 MOhm
• On State resistance @ Vgs = 10V: 22 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.7 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 10 ns
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Turn Off Time: 25 ns
• Turn On Time: 10 ns
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5