Datasheet PMGD280UN,115 - NXP MOSFET, N CH, TRENCH DL, 20 V, SOT363

NXP PMGD280UN,115

Part Number: PMGD280UN,115

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, TRENCH DL, 20 V, SOT363

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Docket:
PMGD280UN
Dual N-channel µTrenchMOSTM ultra low level FET
MBD128
Rev.

01 -- 10 February 2004
Product data

Specifications:

  • Continuous Drain Current Id, N Channel: 870 mA
  • Continuous Drain Current Id: 200 mA
  • Current Id Max: 870 mA
  • Drain Source Voltage Vds, N Channel: 20 V
  • Drain Source Voltage Vds: 20 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on), N Channel: 0.28 Ohm
  • On Resistance Rds(on): 340 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-363
  • Power Dissipation: 400 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (19-Dec-2011)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: SOT-363
  • Transistor Polarity: Dual N Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: 20 V
  • Voltage Vgs Max: 8 V
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Other Names:

PMGD280UN115, PMGD280UN 115

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