Datasheet BCM857BS - NXP TRANSISTOR, MATCHED, SOT-363

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, MATCHED, SOT-363

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Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 45 V
• Collector Emitter Voltage Vces: -200 mV
• Continuous Collector Current Ic Max: 100 mA
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: 100 mA
• DC Current Gain Min: 200
• DC Current Gain: 290
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 250 MHz
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-363
• Power Dissipation Pd: 300 mW
• Power Dissipation Ptot Max: 200 mW
• Power Dissipation per device Max: 300 mW
• SMD Marking: A9*
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-363
• Transistor Polarity: PNP
• Voltage Vcbo: 50 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7