Datasheet PMD9001D - NXP TRANSISTOR, NPN/PNP, 50 V, SSOT-6

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, NPN/PNP, 50 V, SSOT-6

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Docket:
PMD9001D
MOSFET driver
Rev.

01 -- 16 November 2006 Product data sheet
1. Product profile
1.1 General description

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 45 V
• Collector Emitter Voltage Vces: 150 mV
• Current Ic Continuous a Max: 100 mA
• DC Current Gain Min: 24
• DC Current Gain: 200 mA
• Mounting Type: SMD
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SSOT-6
• Power Dissipation Pd: 290 mW
• Power Dissipation Ptot Max: 290 mW
• Resistance R1: 2.2 kOhm
• Resistance R2: 2.2 kOhm
• SMD Marking: 9B
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SSOT
• Transistor Polarity: NPN / PNP
• Transistor Type: General Purpose
• Voltage Vcbo: 50 V

RoHS: Yes