Datasheet IRFHM830TR2PBF - International Rectifier MOSFET, W DIODE, N CH, 30 V, 21 A, PQFN33

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, W DIODE, N CH, 30 V, 21 A, PQFN33

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Docket:
PD - 97547A
IRFHM830PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)

Specifications:

• Continuous Drain Current Id: 21 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On Resistance Rds(on): 0.003 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 2.7 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: PQFN
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• International Rectifier - IR2101PBF