RadioLocman.com Electronics ru
Advanced Search +
  

Datasheet MBR12030CT - Genesic Semiconductor DIODE, RECTIF, 30 V, 120 A, TWIN TOWER

Genesic Semiconductor MBR12030CT

Part Number: MBR12030CT

Manufacturer: Genesic Semiconductor

Description: DIODE, RECTIF, 30 V, 120 A, TWIN TOWER

data sheetDownload Data Sheet

Docket:
MBR12020CT thru MBR12040CTR
Silicon Power Schottky Diode
Features
High Surge Capability Types up to 100 V VRRM Twin Tower Package
VRRM = 20 V - 100 V IF = 120 A

Specifications:

  • Diode Type: Schottky
  • Forward Current If(AV): 60 A
  • Forward Surge Current Ifsm Max: 800 A
  • Forward Voltage VF Max: 650 mV
  • Number of Pins: 2
  • Operating Temperature Range: -40C to +175C
  • Package / Case: Twin Tower
  • Repetitive Reverse Voltage Vrrm Max: 30 V

Accessories:

  • Electrolube - HTS35SL
  • H S MARSTON - 150CN-01250-A-200
  • Multicomp - MK3311

Slices ↓
Radiolocman facebook Radiolocman twitter Radiolocman google plus