Datasheet MBR30035CT - Genesic Semiconductor DIODE, RECTIF, 35 V, 300 A, TWIN TOWER

Genesic Semiconductor MBR30035CT

Part Number: MBR30035CT

Detailed Description

Manufacturer: Genesic Semiconductor

Description: DIODE, RECTIF, 35 V, 300 A, TWIN TOWER

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Docket:
MBR30020CT thru MBR30040CTR
Silicon Power Schottky Diode
Features
· High Surge Capability · Types up to 100 V VRRM Twin Tower Package
VRRM = 20 V - 100 V IF = 300 A

Specifications:

  • Diode Type: Schottky
  • Forward Current If(AV): 150 A
  • Forward Surge Current Ifsm Max: 2.5kA
  • Forward Voltage VF Max: 650 mV
  • Number of Pins: 2
  • Operating Temperature Range: -40°C to +175°C
  • Package / Case: Twin Tower
  • Repetitive Reverse Voltage Vrrm Max: 35 V

Accessories:

  • Electrolube - HTS35SL
  • H S MARSTON - 96CN-01500-A-200
  • Multicomp - MK3311

EMS supplier