Datasheet AD8691, AD8692, AD8694 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Low Cost, Low Noise, CMOS Rail-to-Rail Output Quad Op Amp |
| Pages / Page | 16 / 3 — Data Sheet. AD8691/AD8692/AD8694. SPECIFICATIONS ELECTRICAL … |
| Revision | F |
| File Format / Size | PDF / 317 Kb |
| Document Language | English |
Data Sheet. AD8691/AD8692/AD8694. SPECIFICATIONS ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Test Conditions/Comments
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Text Version of Document
Data Sheet AD8691/AD8692/AD8694 SPECIFICATIONS ELECTRICAL CHARACTERISTICS
VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS VCM = −0.3 V to +1.6 V 0.4 2.0 mV VCM = −0.1 V to +1.6 V; −40°C < TA < +125°C 3.0 mV Input Bias Current IB 0.2 1 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 260 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +85°C 20 pA −40°C < TA < +125°C 75 pA Input Voltage Range −0.3 +1.6 V Common-Mode Rejection Ratio CMRR VCM = −0.3 V to +1.6 V 68 90 dB VCM = −0.1 V to +1.6 V; −40°C < TA < +125°C 60 85 dB Large Signal Voltage Gain AVO AD8691/AD8692 RL = 2 kΩ, VO = 0.5 V to 2.2 V 90 250 V/mV AD8694 RL = 2 kΩ, VO = 0.5 V to 2.2 V 60 V/mV Offset Voltage Drift ∆VOS/∆T AD8691 2 12 µV/°C AD8692/AD8694 1.3 6 µV/°C INPUT CAPACITANCE Common-Mode Input Capacitance CCM 5 pF Differential Input Capacitance CDM 2.5 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 2.64 2.66 V −40°C < TA < +125°C 2.6 V Output Voltage Low VOL IL = 1 mA 25 40 mV −40°C < TA < +125°C 60 mV Short-Circuit Current ISC ±20 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 12 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 80 95 dB −40°C < TA < +125°C 75 95 dB Supply Current/Amplifier ISY VO = 0 V 0.85 0.95 mA −40°C < TA < +125°C 1.2 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 5 V/µs Settling Time tS To 0.01% 1 µs Gain Bandwidth Product GBP 10 MHz Phase Margin Øm 60 Degrees Total Harmonic Distortion + Noise THD + N G = 1, RL = 600 Ω, f = 1 kHz, VO = 250 mV p-p 0.003 % NOISE PERFORMANCE Voltage Noise en p-p f = 0.1 Hz to 10 Hz 1.6 3.0 µV p-p Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz en f = 10 kHz 6.5 nV/√Hz Current Noise Density in f = 1 kHz 0.05 pA/√Hz Rev. F | Page 3 of 16 Document Outline Features Applications General Description Pin Configurations Table of Contents Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Characteristics ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide Automotive Products
VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS VCM = −0.3 V to +1.6 V 0.4 2.0 mV VCM = −0.1 V to +1.6 V; −40°C < TA < +125°C 3.0 mV Input Bias Current IB 0.2 1 pA −40°C < TA < +85°C 50 pA −40°C < TA < +125°C 260 pA Input Offset Current IOS 0.1 0.5 pA −40°C < TA < +85°C 20 pA −40°C < TA < +125°C 75 pA Input Voltage Range −0.3 +1.6 V Common-Mode Rejection Ratio CMRR VCM = −0.3 V to +1.6 V 68 90 dB VCM = −0.1 V to +1.6 V; −40°C < TA < +125°C 60 85 dB Large Signal Voltage Gain AVO AD8691/AD8692 RL = 2 kΩ, VO = 0.5 V to 2.2 V 90 250 V/mV AD8694 RL = 2 kΩ, VO = 0.5 V to 2.2 V 60 V/mV Offset Voltage Drift ∆VOS/∆T AD8691 2 12 µV/°C AD8692/AD8694 1.3 6 µV/°C INPUT CAPACITANCE Common-Mode Input Capacitance CCM 5 pF Differential Input Capacitance CDM 2.5 pF OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 2.64 2.66 V −40°C < TA < +125°C 2.6 V Output Voltage Low VOL IL = 1 mA 25 40 mV −40°C < TA < +125°C 60 mV Short-Circuit Current ISC ±20 mA Closed-Loop Output Impedance ZOUT f = 1 MHz, AV = 1 12 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 80 95 dB −40°C < TA < +125°C 75 95 dB Supply Current/Amplifier ISY VO = 0 V 0.85 0.95 mA −40°C < TA < +125°C 1.2 mA DYNAMIC PERFORMANCE Slew Rate SR RL = 2 kΩ 5 V/µs Settling Time tS To 0.01% 1 µs Gain Bandwidth Product GBP 10 MHz Phase Margin Øm 60 Degrees Total Harmonic Distortion + Noise THD + N G = 1, RL = 600 Ω, f = 1 kHz, VO = 250 mV p-p 0.003 % NOISE PERFORMANCE Voltage Noise en p-p f = 0.1 Hz to 10 Hz 1.6 3.0 µV p-p Voltage Noise Density en f = 1 kHz 8 12 nV/√Hz en f = 10 kHz 6.5 nV/√Hz Current Noise Density in f = 1 kHz 0.05 pA/√Hz Rev. F | Page 3 of 16 Document Outline Features Applications General Description Pin Configurations Table of Contents Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Characteristics ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide Automotive Products
