Datasheet HMC1021 (Analog Devices) - 4

HMC1021LP4E
v02.0511
RMS POWER DETECTOR & ENVELOPE TRACKER, DC - 3.9 GHz Typical Applications Features
the HMc1021LP4e is ideal for: Broadband single-ended rF Input • Log –> Root-Mean-Square (RMS) Conversion rMs Detector with ±1 dB Detection Accuracy to 3.9 GHz • Tx/Rx Signal Strength Indication (TSSI/RSSI) Input Dynamic range: -62 dBm to +8 dBm • RF Power Amplifier Efficiency Control ±1 dB envelope Detection Accuracy over • Receiver Automatic Gain Control 20 dB Input range • Transmitter Power Control envelope Detection Bandwidth > 150MHz • Envelope Tracking 11 Digital y Programmable Integration Bandwidth • PA Linearization Power-Down Mode 24 Lead 4x4mm sMt Package: 16mm² t
Functional Diagram General Descriptions
M the HMc1021LP4e is an rMs power detector with s an integrated high bandwidth envelope detector. the - rMs output is a temperature compensated, monoton- ic, linear-in-dB representation of real rF signal power, rs measured over an input sensing range of 70 dB. the o envelope detector provides an accurate voltage output t which is linearly proportional to the envelope ampli- tude of the rF input signal for modulation bandwidths c up to 150 MHz. the high bandwidth envelope detec- e tion of the HMc1021LP4e makes it ideal for detecting t broadband and high crest factor rF signals commonly e used in cDMA2000, wcDMA, and Lte systems. Ad- D ditional y, the instantaneous envelope output can be r used to create fast, excessive rF power protection, e PA linearization, and efficiency enhancing envelope- tracking PA implementations. w the HMc1021LP4e’s rMs detector integration band- o width is digital y programmable via input pins scI1-4 P over a range of more than 4 decades. this al ows the user to dynamical y set the operation bandwidth and also permits the detection of different types of modula- tions on the same platform. the HMc1021LP4e features an internal op-amp at the rMs output stage, which accommodates slope and intercept adjustments and supports a wide range of applications.
Electrical Specifications I
TA = +25 °C, Vcc = 5V, Sci4 = Sci1 = 0V, Sci3 = Sci2 = 5V, Unless Otherwise Noted Parameter typ. typ. typ. typ. typ. typ. typ. Units
Dynamic Range
(±1dB Error)

[1] Input Frequency 100 900 1900 2200 2700 3500 3900 MHz rMsoUt output 71 71 70 69 68 64 60 dB etoUt output 18 19 20 19 20 19 19 dB
Deviation vs Temperature:
(Over full temperature range -40 °C to 85 °C). 1 dB Deviation is measured from reference, which is the same WCDMA input at 25 °C. [1] With WCDMA 4 Carrier (TM1-64 DPCH) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
11 - 1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com Document Outline Typical Applications Features Functional Diagram General Descriptions Electrical Specifications I Electrical Specifications II RMSOUT vs. Pin with Different Modulations @ 1900 MHz RMSOUT Error vs. Pin with Different Modulations @ 1900 MHz Electrical Specifications III Typical Performance Characteristics RMSOUT & Error vs. Pin @ 100 MHz RMSOUT & Error vs. Pin @ 900 MHz RMSOUT & Error vs. Pin @ 1900 MHz RMSOUT & Error vs. Pin @ 2200 MHz RMSOUT & Error vs. Pin @ 2700 MHz RMSOUT & Error vs. Pin @ 3500 MHz RMSOUT & Error vs. Pin @ 3900 MHz RMSOUT Intercept vs. Frequency RMSOUT Slope vs. Frequency RMSOUT vs. Pin with WCDMA 4 Carrier @ +25 °C RMSOUT Error vs. Pin with WCDMA 4 Carrier @ +25 °C RMSOUT Error vs. Pin with WCDMA 4 Carrier @ +85 °C wrt +25 °C Response RMSOUT Error vs. Pin with WCDMA 4 Carrier @ -40 °C wrt +25 °C Response RMSOUT vs. Pin with CW @ +25 °C RMSOUT Error vs. Pin with CW @ +25 °C RMSOUT vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & +25 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ +25 °C RMSOUT vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & +85 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ +85 °C RMSOUT vs. Pin w/ CW & WCDMA 4 Carrier @ 1900 MHz & -40 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ -40 °C RMSOUT Output Response with SCI = 0000 @ 1900 MHz RMSOUT Output Response with SCI = 1100 @ 1900 MHz Typical Supply Current vs. Pin, Vcc = 5V Input Return Loss vs. Frequency Output Ripple & Rise/Fall Time vs. Integration Setting [Sci4,Sci3,Sci2,Sci1] in Decimal ETOUT vs. Pin with CW @ 900 MHz ETOUT & ETOUT Error vs. Pin with CW @ 900 MHz ETOUT & ETOUT Error vs. Pin with CW @ 1900 MHz ETOUT vs. Pin with CW @ 3500 MHz ETOUT & ETOUT Error vs. Pin with CW @ 3500 MHz ETOUT Intercept vs. Frequency with CW ETOUT Slope vs. Frequency with CW Absolute Maximum Ratings Outline Drawing Package Information Pin Descriptions Evaluation PCB List of Materials Application Circuit Application Information Principle of Operation Configuration For The Typical Application Broadband Single-Ended Input Interface RMSOUT & Error vs. Pin Envelope Detector Output ETOUT Bandwidth ETOUT Response to an RF Input Signal with a 100 MHz Modulation Bandwidth RMS Output Interface and Transient Response Table 1: Transient Response vs. SCI Setting Rise Time vs. SCI Setting over Input Power Rise Settling Time vs. SCI Setting over Input Power Fall Time vs. SCI Setting over Input Power Residual Ripple for 900 MHz WiMAX @ SCI=0100 Residual Ripple for 900 MHz WiMAX @ SCI=0101 Residual Ripple for 900 MHz WiBRO @ SCI=0100 Residual Ripple for 900 MHz WiBRO@ SCI=0110 Residual Ripple for 900 MHz LTE Downlink @ SCI=0100 Residual Ripple for 900 MHz LTE Downlink @ SCI=0110 Residual Ripple for 900 MHz WCDMA4 @ SCI=0011 Residual Ripple for 900 MHz WCDMA4 @ SCI=0100 LOG-Slope and Intercept Slope Adjustment Intercept Adjustment DC Offset Compensation Loop Standby Mode Modulation Performance - Crest factor performance Reading Error for WCDMA 4 Carrier wrt CW Response @ +25 °C Reading Error for WCDMA 4 Carrier wrt CW Response @ 2200 MHz RMSOUT Error vs. Crest Factor over Frequency System Calibration Layout Considerations Definitions