Datasheet MCP6061, MCP6062, MCP6064 (Microchip) - 4
| Manufacturer | Microchip |
| Description | The Microchip Technology MCP6061/2/4 family of operational amplifiers (op amps) has low input offset voltage (±150 µV, maximum) and rail-to-rail input and output operation |
| Pages / Page | 40 / 4 — MCP6061/2/4. DC ELECTRICAL SPECIFICATIONS (CONTINUED). Electrical … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
MCP6061/2/4. DC ELECTRICAL SPECIFICATIONS (CONTINUED). Electrical Characteristics. Parameters. Sym. Min. Typ. Max. Units. Conditions
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MCP6061/2/4 DC ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics
: Unless otherwise indicated, VDD = +1.8V to +6.0V, VSS= GND, TA= +25°C, VCM = VDD/2, V ≈ OUT VDD/2, VL = VDD/2 and RL = 10 kΩ to VL. (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions Open-Loop Gain
DC Open-Loop Gain AOL 95 115 — dB 0.2V < VOUT <(VDD-0.2V) (Large Signal) VCM = VSS
Output
Maximum Output Voltage Swing VOL, VOH VSS+15 — VDD–15 mV 0.5V input overdrive Output Short-Circuit Current ISC — ±6 — mA VDD = 1.8V — ±27 — mA VDD = 6.0V
Power Supply
Supply Voltage VDD 1.8 — 6.0 V Quiescent Current per Amplifier IQ 30 60 90 µA IO = 0, VDD = 6.0V VCM = 0.9VDD
Note 1:
Figure 2-13 shows how VCMR changed across temperature.
AC ELECTRICAL SPECIFICATIONS Electrical Characteristics:
Unless otherwise indicated, TA = +25°C, VDD = +1.8 to +6.0V, VSS = GND, VCM = VDD/2, V ≈ OUT VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions AC Response
Gain Bandwidth Product GBWP — 730 — kHz Phase Margin PM — 61 — ° G = +1 V/V Slew Rate SR — 0.25 — V/µs
Noise
Input Noise Voltage Eni — 4.5 — µVp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni — 25 — nV/√Hz f = 10 kHz Input Noise Current Density ini — 0.6 — fA/√Hz f = 1 kHz
TEMPERATURE SPECIFICATIONS Electrical Characteristics:
Unless otherwise indicated, VDD = +1.8V to +6.0V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions Temperature Ranges
Operating Temperature Range TA -40 — +125 °C
Note 1
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 θJA — 220.7 — °C/W Thermal Resistance, 8L-2x3 TDFN θJA — 52.5 — °C/W Thermal Resistance, 8L-SOIC θJA — 149.5 — °C/W Thermal Resistance, 14L-SOIC θJA — 95.3 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W
Note 1:
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C. DS22189B-page 4 © 2010 Microchip Technology Inc. Document Outline MCP6061/2/4 Features Applications Design Aids Typical Application Description Package Types Notes: 1.0 Electrical Characteristics 1.1 Absolute Maximum Ratings † 1.2 Specifications 1.3 Test Circuits EQUATION 1-1: FIGURE 1-1: AC and DC Test Circuit for Most Specifications. Notes: 2.0 Typical Performance Curves FIGURE 2-1: Input Offset Voltage with VDD = 3.0V. FIGURE 2-2: Input Offset Voltage Drift with VDD = 3.0V and TA £ +85°C. FIGURE 2-3: Input Offset Voltage Drift with VDD = 3.0V and TA ³ +85°C. FIGURE 2-4: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 6.0V. FIGURE 2-5: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 3.0V. FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 1.8V. FIGURE 2-7: Input Offset Voltage vs. Output Voltage. FIGURE 2-8: Input Offset Voltage vs. Power Supply Voltage. FIGURE 2-9: Input Noise Voltage Density vs. Frequency. FIGURE 2-10: Input Noise Voltage Density vs. Common Mode Input Voltage. FIGURE 2-11: CMRR, PSRR vs. Frequency. FIGURE 2-12: CMRR, PSRR vs. Ambient Temperature. FIGURE 2-13: Common Mode Input Voltage Range Limit vs. Ambient Temperature. FIGURE 2-14: Input Bias, Offset Currents vs. Ambient Temperature. FIGURE 2-15: Input Bias Current vs. Common Mode Input Voltage. FIGURE 2-16: Quiescent Current vs Ambient Temperature with VCM = 0.9VDD. FIGURE 2-17: Quiescent Current vs. Power Supply Voltage with VCM = 0.9VDD. FIGURE 2-18: Open-Loop Gain, Phase vs. Frequency. FIGURE 2-19: DC Open-Loop Gain vs. Power Supply Voltage. FIGURE 2-20: DC Open-Loop Gain vs. Output Voltage Headroom. FIGURE 2-21: Channel-to-Channel Separation vs. Frequency (MCP6062/4 only). FIGURE 2-22: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage. FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature. FIGURE 2-24: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature. FIGURE 2-25: Output Short Circuit Current vs. Power Supply Voltage. FIGURE 2-26: Output Voltage Swing vs. Frequency. FIGURE 2-27: Ratio of Output Voltage Headroom to Output Current vs. Output Current. FIGURE 2-28: Output Voltage Headroom vs. Ambient Temperature. FIGURE 2-29: Slew Rate vs. Ambient Temperature. FIGURE 2-30: Small Signal Non-Inverting Pulse Response. FIGURE 2-31: Small Signal Inverting Pulse Response. FIGURE 2-32: Large Signal Non-Inverting Pulse Response. FIGURE 2-33: Large Signal Inverting Pulse Response. FIGURE 2-34: The MCP6061/2/4 Shows No Phase Reversal. FIGURE 2-35: Closed Loop Output Impedance vs. Frequency. FIGURE 2-36: Measured Input Current vs. Input Voltage (below VSS). 3.0 Pin Descriptions TABLE 3-1: Pin Function Table 3.1 Analog Outputs 3.2 Analog Inputs 3.3 Power Supply Pins 3.4 Exposed Thermal Pad (EP) Notes: 4.0 Application Information 4.1 Rail-to-Rail Input 4.1.1 Phase Reversal 4.1.2 Input Voltage Limits FIGURE 4-1: Simplified Analog Input ESD Structures. FIGURE 4-2: Protecting the Analog Inputs. 4.1.3 Input Current Limits FIGURE 4-3: Protecting the Analog Inputs. 4.1.4 Normal Operation 4.2 Rail-to-Rail Output 4.3 Capacitive Loads FIGURE 4-4: Output Resistor, RISO Stabilizes Large Capacitive Loads. FIGURE 4-5: Recommended RISO Values for Capacitive Loads. 4.4 Supply Bypass 4.5 Unused Op Amps FIGURE 4-6: Unused Op Amps. 4.6 PCB Surface Leakage FIGURE 4-7: Example Guard Ring Layout for Inverting Gain. 1. Non-inverting Gain and Unity-Gain Buffer: a) Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface. b) Connect the guard ring to the inverting input pin (VIN–). This biases the guard ring to the common mode input voltage. 2. Inverting Gain and Transimpedance Gain Amplifiers (convert current to voltage, such as photo detectors): a) Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as the op amp (e.g., VDD/2 or ground). b) Connect the inverting pin (VIN–) to the input with a wire that does not touch the PCB surface. 4.7 Application Circuits 4.7.1 Gyrator FIGURE 4-8: Gyrator. 4.7.2 Instrumentation Amplifier FIGURE 4-9: Two Op Amp Instrumentation Amplifier. 4.7.3 Precision Comparator FIGURE 4-10: Precision, Non-inverting Comparator. 5.0 Design Aids 5.1 SPICE Macro Model 5.2 FilterLab® Software 5.3 Microchip Advanced Part Selector (MAPS) 5.4 Analog Demonstration and Evaluation Boards 5.5 Application Notes Notes: 6.0 Packaging Information 6.1 Package Marking Information 60 µA, High Precision Op Amps Appendix A: Revision History Revision B (December 2010) 1. Added new SOT-23-5 package type for MCP6061 device. 2. Corrected Figures 2-13, 2-22, 2-23, 2-24 and 2-28 in Section 2.0 “Typical Performance Curves”. 3. Modified Table 3-1 to show the pin column for MCP6061, SOT-23-5 package. 4. Updated Section 4.1.2 “Input Voltage Limits”. 5. Added Section 4.1.3 “Input Current Limits”. 6. Added new document item in Section 5.5 “Application Notes”. 7. Updated the package markings information and drawings. 8. Updated the Product Identification System page. Revision A (June 2009) Notes: a) MCP6061T-E/OT: Tape and Reel, 5LD SOT-23 pkg b) MCP6061-E/SN: 8LD SOIC pkg c) MCP6061T-E/SN: Tape and Reel, 8LD SOIC pkg d) MCP6061T-E/MNY: Tape and Reel, 8LD 2x3 TDFN pkg a) MCP6062-E/SN: 8LD SOIC pkg b) MCP6062T-E/SN: Tape and Reel, 8LD SOIC pkg c) MCP6062T-E/MNY: Tape and Reel 8LD 2x3 TDFN pkg a) MCP6064-E/SL: 14LD SOIC pkg b) MCP6064T-E/SL: Tape and Reel, 14LD SOIC pkg c) MCP6064-E/ST: 14LD TSSOP pkg d) MCP6064T-E/ST: Tape and Reel, 14LD TSSOP pkg Notes: Corporate Office Atlanta Boston Chicago Cleveland Fax: 216-447-0643 Dallas Detroit Kokomo Toronto Fax: 852-2401-3431 Australia - Sydney China - Beijing China - Shanghai India - Bangalore Korea - Daegu Korea - Seoul Singapore Taiwan - Taipei Fax: 43-7242-2244-393 Denmark - Copenhagen France - Paris Germany - Munich Italy - Milan Spain - Madrid UK - Wokingham Worldwide Sales and Service Trademarks Worldwide Sales
MCP6061/2/4 DC ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics
: Unless otherwise indicated, VDD = +1.8V to +6.0V, VSS= GND, TA= +25°C, VCM = VDD/2, V ≈ OUT VDD/2, VL = VDD/2 and RL = 10 kΩ to VL. (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions Open-Loop Gain
DC Open-Loop Gain AOL 95 115 — dB 0.2V < VOUT <(VDD-0.2V) (Large Signal) VCM = VSS
Output
Maximum Output Voltage Swing VOL, VOH VSS+15 — VDD–15 mV 0.5V input overdrive Output Short-Circuit Current ISC — ±6 — mA VDD = 1.8V — ±27 — mA VDD = 6.0V
Power Supply
Supply Voltage VDD 1.8 — 6.0 V Quiescent Current per Amplifier IQ 30 60 90 µA IO = 0, VDD = 6.0V VCM = 0.9VDD
Note 1:
Figure 2-13 shows how VCMR changed across temperature.
AC ELECTRICAL SPECIFICATIONS Electrical Characteristics:
Unless otherwise indicated, TA = +25°C, VDD = +1.8 to +6.0V, VSS = GND, VCM = VDD/2, V ≈ OUT VDD/2, VL = VDD/2, RL = 10 kΩ to VL and CL = 60 pF. (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions AC Response
Gain Bandwidth Product GBWP — 730 — kHz Phase Margin PM — 61 — ° G = +1 V/V Slew Rate SR — 0.25 — V/µs
Noise
Input Noise Voltage Eni — 4.5 — µVp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni — 25 — nV/√Hz f = 10 kHz Input Noise Current Density ini — 0.6 — fA/√Hz f = 1 kHz
TEMPERATURE SPECIFICATIONS Electrical Characteristics:
Unless otherwise indicated, VDD = +1.8V to +6.0V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions Temperature Ranges
Operating Temperature Range TA -40 — +125 °C
Note 1
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 θJA — 220.7 — °C/W Thermal Resistance, 8L-2x3 TDFN θJA — 52.5 — °C/W Thermal Resistance, 8L-SOIC θJA — 149.5 — °C/W Thermal Resistance, 14L-SOIC θJA — 95.3 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W
Note 1:
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C. DS22189B-page 4 © 2010 Microchip Technology Inc. Document Outline MCP6061/2/4 Features Applications Design Aids Typical Application Description Package Types Notes: 1.0 Electrical Characteristics 1.1 Absolute Maximum Ratings † 1.2 Specifications 1.3 Test Circuits EQUATION 1-1: FIGURE 1-1: AC and DC Test Circuit for Most Specifications. Notes: 2.0 Typical Performance Curves FIGURE 2-1: Input Offset Voltage with VDD = 3.0V. FIGURE 2-2: Input Offset Voltage Drift with VDD = 3.0V and TA £ +85°C. FIGURE 2-3: Input Offset Voltage Drift with VDD = 3.0V and TA ³ +85°C. FIGURE 2-4: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 6.0V. FIGURE 2-5: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 3.0V. FIGURE 2-6: Input Offset Voltage vs. Common Mode Input Voltage with VDD = 1.8V. FIGURE 2-7: Input Offset Voltage vs. Output Voltage. FIGURE 2-8: Input Offset Voltage vs. Power Supply Voltage. FIGURE 2-9: Input Noise Voltage Density vs. Frequency. FIGURE 2-10: Input Noise Voltage Density vs. Common Mode Input Voltage. FIGURE 2-11: CMRR, PSRR vs. Frequency. FIGURE 2-12: CMRR, PSRR vs. Ambient Temperature. FIGURE 2-13: Common Mode Input Voltage Range Limit vs. Ambient Temperature. FIGURE 2-14: Input Bias, Offset Currents vs. Ambient Temperature. FIGURE 2-15: Input Bias Current vs. Common Mode Input Voltage. FIGURE 2-16: Quiescent Current vs Ambient Temperature with VCM = 0.9VDD. FIGURE 2-17: Quiescent Current vs. Power Supply Voltage with VCM = 0.9VDD. FIGURE 2-18: Open-Loop Gain, Phase vs. Frequency. FIGURE 2-19: DC Open-Loop Gain vs. Power Supply Voltage. FIGURE 2-20: DC Open-Loop Gain vs. Output Voltage Headroom. FIGURE 2-21: Channel-to-Channel Separation vs. Frequency (MCP6062/4 only). FIGURE 2-22: Gain Bandwidth Product, Phase Margin vs. Common Mode Input Voltage. FIGURE 2-23: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature. FIGURE 2-24: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature. FIGURE 2-25: Output Short Circuit Current vs. Power Supply Voltage. FIGURE 2-26: Output Voltage Swing vs. Frequency. FIGURE 2-27: Ratio of Output Voltage Headroom to Output Current vs. Output Current. FIGURE 2-28: Output Voltage Headroom vs. Ambient Temperature. FIGURE 2-29: Slew Rate vs. Ambient Temperature. FIGURE 2-30: Small Signal Non-Inverting Pulse Response. FIGURE 2-31: Small Signal Inverting Pulse Response. FIGURE 2-32: Large Signal Non-Inverting Pulse Response. FIGURE 2-33: Large Signal Inverting Pulse Response. FIGURE 2-34: The MCP6061/2/4 Shows No Phase Reversal. FIGURE 2-35: Closed Loop Output Impedance vs. Frequency. FIGURE 2-36: Measured Input Current vs. Input Voltage (below VSS). 3.0 Pin Descriptions TABLE 3-1: Pin Function Table 3.1 Analog Outputs 3.2 Analog Inputs 3.3 Power Supply Pins 3.4 Exposed Thermal Pad (EP) Notes: 4.0 Application Information 4.1 Rail-to-Rail Input 4.1.1 Phase Reversal 4.1.2 Input Voltage Limits FIGURE 4-1: Simplified Analog Input ESD Structures. FIGURE 4-2: Protecting the Analog Inputs. 4.1.3 Input Current Limits FIGURE 4-3: Protecting the Analog Inputs. 4.1.4 Normal Operation 4.2 Rail-to-Rail Output 4.3 Capacitive Loads FIGURE 4-4: Output Resistor, RISO Stabilizes Large Capacitive Loads. FIGURE 4-5: Recommended RISO Values for Capacitive Loads. 4.4 Supply Bypass 4.5 Unused Op Amps FIGURE 4-6: Unused Op Amps. 4.6 PCB Surface Leakage FIGURE 4-7: Example Guard Ring Layout for Inverting Gain. 1. Non-inverting Gain and Unity-Gain Buffer: a) Connect the non-inverting pin (VIN+) to the input with a wire that does not touch the PCB surface. b) Connect the guard ring to the inverting input pin (VIN–). This biases the guard ring to the common mode input voltage. 2. Inverting Gain and Transimpedance Gain Amplifiers (convert current to voltage, such as photo detectors): a) Connect the guard ring to the non-inverting input pin (VIN+). This biases the guard ring to the same reference voltage as the op amp (e.g., VDD/2 or ground). b) Connect the inverting pin (VIN–) to the input with a wire that does not touch the PCB surface. 4.7 Application Circuits 4.7.1 Gyrator FIGURE 4-8: Gyrator. 4.7.2 Instrumentation Amplifier FIGURE 4-9: Two Op Amp Instrumentation Amplifier. 4.7.3 Precision Comparator FIGURE 4-10: Precision, Non-inverting Comparator. 5.0 Design Aids 5.1 SPICE Macro Model 5.2 FilterLab® Software 5.3 Microchip Advanced Part Selector (MAPS) 5.4 Analog Demonstration and Evaluation Boards 5.5 Application Notes Notes: 6.0 Packaging Information 6.1 Package Marking Information 60 µA, High Precision Op Amps Appendix A: Revision History Revision B (December 2010) 1. Added new SOT-23-5 package type for MCP6061 device. 2. Corrected Figures 2-13, 2-22, 2-23, 2-24 and 2-28 in Section 2.0 “Typical Performance Curves”. 3. Modified Table 3-1 to show the pin column for MCP6061, SOT-23-5 package. 4. Updated Section 4.1.2 “Input Voltage Limits”. 5. Added Section 4.1.3 “Input Current Limits”. 6. Added new document item in Section 5.5 “Application Notes”. 7. Updated the package markings information and drawings. 8. Updated the Product Identification System page. Revision A (June 2009) Notes: a) MCP6061T-E/OT: Tape and Reel, 5LD SOT-23 pkg b) MCP6061-E/SN: 8LD SOIC pkg c) MCP6061T-E/SN: Tape and Reel, 8LD SOIC pkg d) MCP6061T-E/MNY: Tape and Reel, 8LD 2x3 TDFN pkg a) MCP6062-E/SN: 8LD SOIC pkg b) MCP6062T-E/SN: Tape and Reel, 8LD SOIC pkg c) MCP6062T-E/MNY: Tape and Reel 8LD 2x3 TDFN pkg a) MCP6064-E/SL: 14LD SOIC pkg b) MCP6064T-E/SL: Tape and Reel, 14LD SOIC pkg c) MCP6064-E/ST: 14LD TSSOP pkg d) MCP6064T-E/ST: Tape and Reel, 14LD TSSOP pkg Notes: Corporate Office Atlanta Boston Chicago Cleveland Fax: 216-447-0643 Dallas Detroit Kokomo Toronto Fax: 852-2401-3431 Australia - Sydney China - Beijing China - Shanghai India - Bangalore Korea - Daegu Korea - Seoul Singapore Taiwan - Taipei Fax: 43-7242-2244-393 Denmark - Copenhagen France - Paris Germany - Munich Italy - Milan Spain - Madrid UK - Wokingham Worldwide Sales and Service Trademarks Worldwide Sales
