Datasheet DN1509 (Microchip) - 3

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DN1509 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS†
Drain-to-source voltage.. BVDSX Drain-to-gate voltage..BVDGX Gate-to-source voltage... ±20V Operating and storage temperature... -55°C to +150°C
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
1.1 Electrical Specifications TABLE 1-1: DC AND AC CHARACTERISTICS Electrical Specifications:
Unless otherwise specified, for all specifications TA =TJ = +25°C
Symbol Parameter Min Typ Max Units Conditions DC Parameters
(
Note 1 ,
unless otherwise stated) BVDSX Drain-to-source breakdown voltage 90 – – V VGS = -5V, ID = 1.0µA VGS(OFF) Gate-to-source off voltage -1.8 – -3.5 V ID = 10µA ∆VGS(OFF) VGS(OFF) change with temperature – – -4.5 mV/°C VDS = 15V, ID= 10µA (
Note 2
) IGSS Gate body leakage – – 100 nA VGS = ±20V, VDS = 0V – – 1.0 µA VDS = BVDSX, VGS = -5.0V ID(OFF) Drain-to-source leakage current V – – 1.0 mA DS = 0.8 BVDSX, VGS = -5.0V, TA= 125°C (
Note 2
) IDSS Saturated drain-to-source current 300 540 – mA VGS = 0V, VDS = 25V Static drain-to-source on-state RDS(ON) – 3.2 6.0 Ω V resistance GS = 0V, ID= 200mA ∆RDS(ON) Change in RDS(ON) with temperature – – 1.1 %/°C VGS = 0V, ID= 200mA (
Note 2
)
AC Parameters
(
Note 2
) GFS Forward transconductance 200 – – mmho VDS = 10V, ID= 200mA CISS Input capacitance 70 150 V C pF GS = -10V, VDS = 25V, OSS Common source output capacitance – 20 40 f = 1MHz

CRSS Reverse transfer capacitance – 6.0 15 td(ON) Turn-on delay time – 12 30 V t DD = 25V, r Rise time – 16 45 ns ID = 100mA, td(OFF) Turn-off delay time – 15 45 RGEN = 25Ω tf Fall time – 25 60
Diode Parameters
V V GS = -5.0V, ISD= 500mA SD Diode forward voltage drop – – 1.8 V
(Note 1 )
V t GS = -5.0V, ISD= 500mA rr Reverse recovery time – 400 – ns (
Note 2 ) Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2:
Specification is obtained by characterization and is not 100% tested.  2015 Microchip Technology Inc. DS20005403B-page 3 Document Outline 1.0 Electrical Characteristics 1.1 Electrical Specifications TABLE 1-1: DC and AC Characteristics TABLE 1-2: Typical Thermal Resistance TABLE 1-3: Thermal characteristics 2.0 Pin Description TABLE 2-1: Pin Description 3.0 Application Information FIGURE 3-1: Switching Waveforms and Test Circuit 4.0 Packaging Information 4.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Cleveland Dallas Detroit Houston, TX Indianapolis Los Angeles New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Asia Pacific Office Hong Kong Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Wuhan China - Xian ASIA/PACIFIC China - Xiamen China - Zhuhai India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok EUROPE Austria - Wels Denmark - Copenhagen France - Paris Germany - Dusseldorf Germany - Karlsruhe Germany - Munich Italy - Milan Italy - Venice Netherlands - Drunen Poland - Warsaw Spain - Madrid Sweden - Stockholm UK - Wokingham