Datasheet AP1910 (Anwell Semiconductor) - 4
| Manufacturer | Anwell Semiconductor |
| Description | Universal High Brightness LED Driver Controller |
| Pages / Page | 11 / 4 — AP1910 Anwell Semiconductor Corp. Absolute Maximum Ratings. Parameter … |
| File Format / Size | PDF / 583 Kb |
| Document Language | English |
AP1910 Anwell Semiconductor Corp. Absolute Maximum Ratings. Parameter (PIN). Symbol. Ratings. Units
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AP1910 Anwell Semiconductor Corp. Absolute Maximum Ratings Parameter (PIN) Symbol Ratings Units
VIN to GND -- 500 V VDD, LD, PWMD, GATE to GND -- 36 V CS, RT, to GND -- 7 V Junction Temperature TJ +150 °C Thermal Resistance SOIC-8 θJA 130 °C/W Power Dissipation SOIC-8 PD 630 mW Operating Ambient Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -55 ~ +150 °C Lead Temperature (soldering, 10sec) -- +260 °C Note： * The power dissipation values are based on the condition that junction temperature TJ and ambient temperature TA difference is 100°C. * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and function operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum -rated conditions for extended periods may affect device reliability. *Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
AP1910 Function Block Diagram
` AP1910 VIN 7.5V 5V 1 HV Regulator LDO RT OSC 8 VDD 6 245mV S GATE Q 4 Driver R LD 7 CS 2 OTP 3 5 GND PWMD All reserved by AnSC © 2012 Page: 4/11 V1.6-2014/09/29
VIN to GND -- 500 V VDD, LD, PWMD, GATE to GND -- 36 V CS, RT, to GND -- 7 V Junction Temperature TJ +150 °C Thermal Resistance SOIC-8 θJA 130 °C/W Power Dissipation SOIC-8 PD 630 mW Operating Ambient Temperature TOPR -40 ~ +85 °C Storage Temperature TSTG -55 ~ +150 °C Lead Temperature (soldering, 10sec) -- +260 °C Note： * The power dissipation values are based on the condition that junction temperature TJ and ambient temperature TA difference is 100°C. * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and function operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum -rated conditions for extended periods may affect device reliability. *Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
AP1910 Function Block Diagram
` AP1910 VIN 7.5V 5V 1 HV Regulator LDO RT OSC 8 VDD 6 245mV S GATE Q 4 Driver R LD 7 CS 2 OTP 3 5 GND PWMD All reserved by AnSC © 2012 Page: 4/11 V1.6-2014/09/29
