Datasheet LTC4009, LTC4009-1, LTC4009-2 (Analog Devices) - 4

ManufacturerAnalog Devices
DescriptionHigh Efficiency, Multi-Chemistry Battery Charger
Pages / Page28 / 4 — The. denotes the specifications which apply over the full operating
File Format / SizePDF / 365 Kb
Document LanguageEnglish

The. denotes the specifications which apply over the full operating

The denotes the specifications which apply over the full operating

Model Line for this Datasheet

Text Version of Document

LTC4009 LTC4009-1/LTC4009-2 e

lecTrical characTerisTics
The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. DCIN = 20V, BAT = 12V, GND = 0V unless otherwise noted. (Note 2) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH SHDN Input Voltage High l 1.4 V RIN SHDN Pull-Down Resistance 50 kΩ IDCS DCIN Shutdown Current SHDN = 0V 215 µA ICLPS CLP Shutdown Current CLP = 12V, SHDN = 0V or DCDIV = 0V l 9 18 µA ILEAK-BAT BAT Leakage Current SHDN = 0V or DCDIV = 0V, l –1.5 0 1.5 µA 0V ≤ CSP = CSN = BAT ≤ 20V ILEAK-CSN CSN Leakage Current SHDN = 0V or DCDIV = 0V, l –1.5 0 1.5 µA 0V ≤ CSP = CSN = BAT ≤ 20V ILEAK-CSP CSP Leakage Current SHDN = 0V or DCDIV = 0V, l –1.5 0 1.5 µA 0V ≤ CSP = CSN = BAT ≤ 20V ILEAK-SW SW Leakage Current SHDN = 0V or DCDIV = 0V, l –1 0 2 µA 0V ≤ SW ≤ 20V
INTVDD Regulator
INTVDD Output Voltage No Load l 4.85 5 5.15 V ∆VDD Load Regulation IDD = 20mA –0.4 –1 % IDD Short-Circuit Current (Note 6) INTVDD = 0V 50 85 130 mA
Switching Regulator
VCE Charge Enable Threshold Voltage CLP – BAT, CLP Rising C-Grade l 65 100 135 mV I-Grade l 60 140 mV IITH ITH Current ITH = 1.4V –40/+90 µA fTYP Typical Switching Frequency 467 550 633 kHz fMIN Minimum Switching Frequency CLOAD = 3.3nF 20 25 kHz DCMAX Maximum Duty Cycle CLOAD = 3.3nF 98 99 % tR-TG TGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 110 ns tF-TG TGATE Fall Time CLOAD = 3.3nF, 90% – 10% 50 110 ns tR-BG BGATE Rise Time CLOAD = 3.3nF, 10% – 90% 60 110 ns tF-BG BGATE Fall Time CLOAD = 3.3nF, 90% – 10% 60 110 ns tNO TGATE, BGATE Non-Overlap Time CLOAD = 3.3nF, 10% – 10% 110 ns
Float Voltage Select Inputs (LTC4009-1/LTC4009-2 Only)
VIL Input Voltage Low 0.5 V VIH Input Voltage High 3.5 V IIN Input Current 0V ≤ VIN ≤ 5V –10 10 µA
Indicator Outputs
VOL Output Voltage Low ILOAD = 100µA, PROG = 1.2V 500 mV ILEAK Output Leakage SHDN = 0V, DCDIV = 0V, VOUT = 20V l –10 10 µA IC10 CHRG C/10 Current Sink CHRG = 2.5V l 15 25 38 µA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings dissipation PD (in watts) by the formula TJ = TA + (θJA • PD). Refer to the may cause permanent damage to the device. Exposure to any Absolute Applications Information section for details. Maximum Rating condition for extended periods may affect device
Note 4:
All currents into device pins are positive; all currents out of device reliability and lifetime. pins are negative. All voltages are referenced to GND, unless otherwise
Note 2:
The LTC4009C is guaranteed to meet performance specifications specified. over the 0°C to 85°C operating temperature range. The LTC4009I is
Note 5:
This threshold is guaranteed to be satisfied if CLP = DCIN when guaranteed to meet performance specifications over the –40°C to 125°C the LTC4009 exits shutdown. operating temperature range.
Note 6:
Output current may be limited by internal power dissipation. Refer
Note 3:
Operating junction temperature TJ (in °C) is calculated from to the Applications Information section for details. the ambient temperature TA and the total continuous package power 4009fd Document Outline Features Applications Description Typical Application Absolute Maximum Ratings Pin Configuration Order Information Electrical Characteristics Test Circuits Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Package Description Revision History Typical Application Related Parts
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