Datasheet LT6556 (Analog Devices) - 3

ManufacturerAnalog Devices
Description750MHz Gain of 1 Triple 2:1Video Multiplexer
Pages / Page16 / 3 — The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply …
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The. ELECTRICAL CHARACTERISTICS. denotes the specifi cations which apply over the full operating

The ELECTRICAL CHARACTERISTICS denotes the specifi cations which apply over the full operating

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LT6556
The ELECTRICAL CHARACTERISTICS denotes the specifi cations which apply over the full operating temperature range, otherwise specifi cations are at TA = 25°C. VS = ±5V, RL = 1k, CL = 1.5pF, VEN = 0.4V, VAGND, VDGND, VVREF = 0V. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
IPSRR Input Current Power Supply Rejection VS = ±2.25V to ±6V (Note 6) ● 1 ±3 µA/V AV ERR Gain Error VOUT = VREF = ±2V, Nominal Gain 1V/V ● –2.8 –1.15 0 % AV MATCH Gain Matching Any One Channel to Another ±0.05 % VOUT Output Voltage Swing (Note 7) ● ±3.65 ±3.85 V IS Supply Current, Per Amplifi er RL = ∞ 9.5 13 mA ● 14.5 mA Supply Current, Disabled, Per Amplifi er V⎯ ● E⎯N = 4V, RL = ∞ 47 330 µA V⎯ ● E⎯N = Open, RL = ∞ 42 330 µA I⎯ ● E⎯N Enable Pin Current V⎯E⎯N = 0.4V –200 –95 µA V⎯ ● E⎯N = 4V –75 –21 µA I ● SEL Select Pin Current VSEL = 0.4V –50 –5 µA V ● SEL = 4V –50 –1 µA ISC Output Short-Circuit Current RL = 0Ω, VIN = ±2V, VREF = ±1V ● ±50 ±105 mA SR Slew Rate ±1V on ±2.2V Output Step (Note 8) 1200 2100 V/µs –3dB BW Small-Signal –3dB Bandwidth VOUT = 200mVP-P 750 MHz 0.1dB BW Gain Flatness ±0.1dB Bandwidth VOUT = 200mVP-P 120 MHz FPBW Full Power Bandwidth 2V VOUT = 2VP-P (Note 9) 190 335 MHz Full Power Bandwidth 4V VOUT = 4VP-P (Note 9) 175 MHz All-Hostile Crosstalk f = 10MHz, VIN = 2VP-P –72 dB f = 100MHz, VIN = 2VP-P –52 dB Selected Channel to Unselected f = 10MHz, VIN = 2VP-P –85 dB Channel Crosstalk f = 100MHz, VIN = 2VP-P –64 dB Channel Select Output Transient INA = INB = 0V 200 mVP-P Channel-to-Channel Select Time INA = –1V, INB = 1V 8 ns from 50% SEL to VOUT = 0V tS Settling Time 0.1% of VFINAL, VSTEP = 2V 6.5 ns tR, tF Small-Signal Rise and Fall Time 10% to 90%, VOUT = 200mVP-P 500 ps dG Differential Gain (Note 10) 0.056 % dP Differential Phase (Note 10) 0.028 Deg HD2 2nd Harmonic Distortion f = 10MHz, VOUT = 2VP-P –84 dBc HD3 3rd Harmonic Distortion f = 10MHz, VOUT = 2VP-P –87 dBc
Note 1:
Absolute Maximum Ratings are those values beyond which the life to V– + 0.4V, and the SEL pin is set to either V– + 0.4V or V– + 4V. At ±6V of a device may be impaired. and all other cases, DGND is set to ground and the ⎯E⎯N and SEL pins are
Note 2:
This parameter is guaranteed to meet specifi ed performance referenced from it. through design and characterization. It is not production tested.
Note 7:
The VREF pin is set to 3V when testing positive swing and –3V
Note 3:
As long as output current and junction temperature are kept when testing negative swing to ensure that the internal input clamps do below the Absolute Maximum Ratings, no damage to the part will occur. not limit the output swing. Depending on the supply voltage, a heat sink may be required.
Note 8:
Slew rate is 100% production tested using both inputs of
Note 4:
The LT6556C is guaranteed functional over the operating channel 2. Slew rates of channels 1 and 3 are guaranteed through temperature range of –40°C to 85°C. design and characterization.
Note 5:
The LT6556C is guaranteed to meet specifi ed performance from
Note 9:
Full power bandwidth is calculated from the slew rate: 0°C to 70°C. The LT6556C is designed, characterized and expected to FPBW = SR/(π • V P-P) meet specifi ed performance from –40°C and 85°C but is not tested or
Note 10:
Differential gain and phase are measured using a Tektronix QA sampled at these temperatures. The LT6556I is guaranteed to meet TSG120YC/NTSC signal generator and a Tektronix 1780R video specifi ed performance from –40°C to 85°C. measurement set. The resolution of this equipment is better than 0.05%
Note 6:
In order to follow the constraints for 4.5V operation for PSRR and 0.05°. Nine identical amplifi er stages were cascaded giving an and IPSRR testing at ± 2.25V, the DGND pin is set to V–, the ⎯E⎯N pin is set effective resolution of better than 0.0056% and 0.0056°. 6556f 3
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