Datasheet IRL3705N (Infineon) - 5
| Manufacturer | Infineon |
| Description | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| Pages / Page | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Revision | 01_02 |
| File Format / Size | PDF / 455 Kb |
| Document Language | English |
Fig 10a. Fig 9. Fig 10b. Fig 11
Model Line for this Datasheet
Text Version of Document
IRL3705NPbF 100 LIMITED BY PACKAGE 80 ) 60 urrent (A rain C 40
Fig 10a.
Switching Time Test Circuit , D I D 20 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms 1 D = 0.50 ) JC th (Z 0.20 se 0.10 0.1 spon e l R 0.05 a rm 0.02 e SINGLE PULSE 0.01 (THERMAL RESPONSE) Th PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ= P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2018-05-25
Fig 10a.
Switching Time Test Circuit , D I D 20 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms 1 D = 0.50 ) JC th (Z 0.20 se 0.10 0.1 spon e l R 0.05 a rm 0.02 e SINGLE PULSE 0.01 (THERMAL RESPONSE) Th PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ= P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2018-05-25
