Datasheet DGTD65T50S1PT (Diodes) - 3

DGTD65T50S1PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 650 – – V IC = 2mA, VGE = 0V T –

1.85

2.40

Collector-Emitter Saturation Voltage vj = 25°C VCE(sat) V IC = 50A, VGE = 15V Tvj = 175°C – 2.20 – T –

1.65

2.05

Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 30A

Tvj = 175°C – 1.55 – Gate-Emitter Threshold Voltage VGE(th) 3.8

5.0

6.2

V VCE = VGE, IC = 0.5mA

Zero Gate Voltage Collector Current ICES –

–

40

µA VCE = 650V, VGE = 0V

Gate-Emitter Leakage Current IGES – – ±100 nA VGE = 20V, VCE = 0V
DYNAMIC CHARACTERISTICS
Total Gate Charge

Qg –

287

– Gate-Emitter Charge

Qge

–

42

–

nC

VCE = 520V, IC = 50A, VGE = 15V

Gate-Collector Charge Qgc –

181 –

Input Capacitance

Cies –

4,453 –

V Reverse Transfer Capacitance

Cres – 161 – pF

CE = 25V, VGE = 0V, f = 1MHz

Output Capacitance Coes – 238 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH – Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 400V, IC(SC) – 140 – A Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 5µs, Tvj = 150°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) –

58 –

Rise time tr –

60 –

ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) –

328 –

IC = 50A, RG = 7.9Ω, Fall Time tf –

44 –

Inductive Load, Turn-on Switching Energy Eon – 0.77 – Tvj = 25°C Turn-off Switching Energy

Eoff – 0.55 – mJ Total Switching Energy

Ets –

1.32 –

Reverse Recovery Time trr – 80 – ns IF = 30A, Reverse Recovery Current Irr – 24 – A diF/dt = 1000A/µs, Reverse Recovery Charge Q T rr – 0.95 – µC vj = 25°C Turn-on Delay Time td(on) –

51 –

Rise time tr –

66 –

ns VGE = 15V, VCC = 400V, Turn-off Delay Time td(off) –

350 –

IC = 50A, RG = 7.9Ω, Fall Time tf – 49 – Inductive Load, Turn-on Switching Energy Eon – 1.05 – Tvj = 175°C Turn-off Switching Energy

Eoff –

0.55 –

mJ Total Switching Energy

Ets –

1.6 –

Reverse Recovery Time trr –

116 –

ns IF = 30A, Reverse Recovery Current

Irr –

34 –

A diF/dt = 1000A/µs, Reverse Recovery Charge

Q T rr – 1.97 – µC vj = 175°C DGTD65T50S1PT 3 of 9 March 2018 Document Number DS39668 Rev. 1 - 2
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