Datasheet MMBT3906 (NXP) - 3

link to page 3 link to page 4 link to page 5 NXP Semiconductors Product data sheet PNP switching transistor MMBT3906
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA IEBO emitter cut-off current IC = 0; VEB = −6 V − −50 nA hFE DC current gain VCE = −1 V; see Fig.2 IC = −0.1 mA 60 − IC = −1 mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA 30 − VCEsat collector-emitter saturation IC = −10 mA; IB = −1 mA − −250 mV voltage IC = −50 mA; IB = −5 mA − −400 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA − −850 mV IC = −50 mA; IB = −5 mA − −950 mV Cc collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF C − e emitter capacitance IC = ic = 0; VEB = −500 mV; 10 pF f = 1 MHz fT transition frequency IC = −10 mA; VCE = −20 V; 250 − MHz f = 100 MHz F noise figure I − C = −100 µA; VCE = −5 V; 4 dB RS = 1 kΩ; f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels);
see

Fig.7 t − d delay time ICon = −10 mA; IBon = −1 mA; 35 ns IBoff = 1 mA tr rise time − 35 ns ts storage time − 225 ns tf fall time − 75 ns 2003 Mar 18 3 Document Outline Features Applications Description Marking Pinning Quick reference data Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers