Datasheet ADUM3123 (Analog Devices) - 3

ManufacturerAnalog Devices
DescriptionIsolated Precision Gate Driver, 4 A Output
Pages / Page15 / 3 — Data Sheet. ADuM3123. SPECIFICATIONS ELECTRICAL CHARACTERISTICS—5 V …
File Format / SizePDF / 493 Kb
Document LanguageEnglish

Data Sheet. ADuM3123. SPECIFICATIONS ELECTRICAL CHARACTERISTICS—5 V OPERATION. Table 1. Parameter. Symbol Min. Typ. Max. Unit

Data Sheet ADuM3123 SPECIFICATIONS ELECTRICAL CHARACTERISTICS—5 V OPERATION Table 1 Parameter Symbol Min Typ Max Unit

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Data Sheet ADuM3123 SPECIFICATIONS ELECTRICAL CHARACTERISTICS—5 V OPERATION
All voltages are relative to their respective ground. 4.5 V ≤ VDD1 ≤ 5.5 V, and 4.5 V ≤ VDD2 ≤ 18 V, unless stated otherwise. Al minimum/ maximum specifications apply over TJ = −40°C to +125°C. Al typical specifications are at TJ = 25°C, VDD1 = 5 V, and VDD2 = 12 V. Switching specifications are tested with CMOS signal levels.
Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
DC SPECIFICATIONS Input Supply Current, Quiescent IDDI(Q) 1.4 2.4 mA Output Supply Current, Quiescent IDDO(Q) 2.3 3.7 mA Supply Current at 1 MHz VDD1 Supply Current IDD1 1.6 2.5 mA Up to 1 MHz, no load VDD2 Supply Current IDD2 5.6 8.0 mA Up to 1 MHz, no load Input Currents II −1 +0.01 +1 µA 0 V ≤ VI ≤ VDD1 Input Threshold Logic High VIH 0.7 × VDD1 V Logic Low VIL 0.3 × VDD1 V Output Voltages Logic High VOH VDD2 − 0.1 VDD2 V VO = −20 mA, VI = VIH Logic Low VOL 0.0 0.15 V VO = +20 mA, VI = VIL Undervoltage Lockout, VDD1 Supply Positive Going Threshold VDD1UV+ 2.8 V Negative Going Threshold VDD1UV− 2.6 V Hysteresis VDD1UVH 0.2 V Undervoltage Lockout, VDD2 Supply Positive Going Threshold VDD2UV+ 4.1 4.4 V A Grade 6.9 7.4 V B Grade 10.5 11.1 V C Grade Negative Going Threshold VDD2UV− 3.2 3.6 V A Grade 5.7 6.2 V B Grade 9.0 9.6 V C Grade Hysteresis VDD2UVH 0.5 V A Grade 0.7 V B Grade 0.9 V C Grade Output Short-Circuit Pulsed Current1 IO(SC) 2.0 4.0 A VDD2 = 12 V Output Source Resistance RON_P 0.25 0.95 1.5 Ω VDD2 = 12 V, I = −250 mA O V Output Sink Resistance RON_N 0.55 0.6 1.35 Ω VDD2 = 12 V, I = 250 mA O V THERMAL SHUTDOWN TEMPERATURES Junction Temperature Shutdown Rising Edge TJR 150 °C Falling Edge TJF 140 °C Rev. 0 | Page 3 of 15 Document Outline Features Applications General Description Functional Block Diagram Revision History Specifications Electrical Characteristics—5 V Operation Electrical Characteristics—3.3 V Operation Package Characteristics Insulation and Safety Related Specifications Regulatory Information DIN V VDE V 0884-10 (VDE V 0884-10) Insulation Characteristics Recommended Operating Conditions Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Applications Information Printed Circuit Board (PCB) Layout Propagation Delay Related Parameters Thermal Limitations and Switch Load Characteristics Output Load Characteristics DC Correctness and Magnetic Field Immunity Power Consumption Insulation Lifetime Outline Dimensions Ordering Guide
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