GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Absolute Maximum Ratings (Tcase = 25 °C except as noted) ParameterSymbolValueUnit Operating Junction Temperature TJ -55 to +150 °C Storage Temperature Range TS -55 to +150 °C Drain-to-Source Voltage VDS 650 V Transient Drain-to-Source Voltage (note 1) VDS(transient) 750 V Gate-to-Source Voltage VGS -10 to +7 V Gate-to-Source Voltage - transient (note 1) VGS(transient) -20 to +10 V Continuous Drain Current (Tcase=25 °C) (note 2) IDS 30 A Continuous Drain Current Tcase=100 °C) (note 2) IDS 25 A Pulse Drain Current (Pulse width 100 µs) IDS Pulse 72 A (1) For 1 µs (2) Limited by saturation