Datasheet GS66508T (GaN Systems) - 2

ManufacturerGaN Systems
Description650V Enhancement Mode GaN Transistor
Pages / Page17 / 2 — Parameter. Symbol. Value. Unit. Units. Ordering. Reel. code. Package …
File Format / SizePDF / 1.0 Mb
Document LanguageEnglish

Parameter. Symbol. Value. Unit. Units. Ordering. Reel. code. Package type. Packing. method. Qty. Diameter. Width

Parameter Symbol Value Unit Units Ordering Reel code Package type Packing method Qty Diameter Width

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GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Absolute Maximum Ratings (Tcase = 25 °C except as noted)
Parameter Symbol Value Unit
Operating Junction Temperature TJ -55 to +150 °C Storage Temperature Range TS -55 to +150 °C Drain-to-Source Voltage VDS 650 V Transient Drain-to-Source Voltage (note 1) VDS(transient) 750 V Gate-to-Source Voltage VGS -10 to +7 V Gate-to-Source Voltage - transient (note 1) VGS(transient) -20 to +10 V Continuous Drain Current (Tcase=25 °C) (note 2) IDS 30 A Continuous Drain Current Tcase=100 °C) (note 2) IDS 25 A Pulse Drain Current (Pulse width 100 µs) IDS Pulse 72 A (1) For 1 µs (2) Limited by saturation

Thermal Characteristics (Typical values unless otherwise noted)
Parameter Symbol Value Units
Thermal Resistance (junction-to-case) – top side RΘJC 0.5 °C /W Thermal Resistance (junction-to-board) (note 3) RΘJB 5.0 °C /W Maximum Soldering Temperature (MSL3 rated) TSOLD 260 °C Ordering Information
Ordering Reel code Package type Packing method Qty Reel Diameter Width
GS66508T-TR GaNPX® Top-Side Cooled Tape-and-Reel 3000 13” (330mm) 16mm GS66508T-MR GaNPX® Top-Side Cooled Mini-Reel 250 7” (180mm) 16mm Rev 180424 © 2009-2018 GaN Systems Inc. 2 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback
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