Datasheet HMC8120 (Analog Devices) - 3

Data Sheet HMC8120 SPECIFICATIONS
TA = 25°C, VDDx = 4 V, VCTLx = −5 V, unless otherwise noted.
Table 1. Parameter Min Typ Max Unit
OPERATING CONDITIONS RF Frequency Range 71 76 GHz PERFORMANCE Gain 19 22 dB Gain Variation over Temperature 0.03 dB/°C Gain Control Range 10 15 dB Output Power for 1 dB Compression (P1dB) 17 21 dBm Saturated Output Power (PSAT) 22 dBm Output Third-Order Intercept (OIP3) at Maximum Gain1 30 dBm Input Return Loss 10 dB Output Return Loss 12 dB POWER SUPPLY Total Supply Current (IDD)2 250 mA 1 Data taken at power input (PIN) = −10 dBm/tone, 1 MHz spacing. 2 Set VCTL1/VCTL2 = −5 V and then adjust VGG1/VGG2, VGG3, VGG4, VGG5, and VGG6 from −2 V to 0 V to achieve a total drain current (IDD) = 250 mA. Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE