Datasheet BC847PN (Diodes) - 4
| Manufacturer | Diodes |
| Description | Npn+pnp |
| Pages / Page | 6 / 4 — BC847PN. Electrical Characteristics:. PNP, BC857B Type (Q2). … |
| File Format / Size | PDF / 464 Kb |
| Document Language | English |
BC847PN. Electrical Characteristics:. PNP, BC857B Type (Q2). Characteristic (Note 7). Symbol. Min. Typ. Max. Unit. Test Condition
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BC847PN Electrical Characteristics: PNP, BC857B Type (Q2)
(@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -50 — — V IC = -100µA Collector-Emitter Breakdown Voltage BVCEO -45 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -6 — — V IE = -100µA DC Current Gain hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA -75 -300 I Collector-Emitter Saturation Voltage V C = -10mA, IB = -0.5mA CE(SAT) — mV -250 -650 IC = -100mA, IB = -5.0mA -700 — I Base-Emitter Saturation Voltage V C = -10mA, IB = -0.5mA BE(SAT) — mV -850 -950 IC = -100mA, IB = -5.0mA -600 -650 -750 V Base-Emitter Voltage V CE = -5.0V, IC = -2.0mA BE(ON) — mV — -820 VCE = -5.0V, IC = -10mA — — -15 nA V Collector-Cutoff Current CB = -30V ICBO — — -4.0 µA VCB = -30V, TA = +150°C V Gain Bandwidth Product f CE = -5.0V, IC = -10mA, T 100 200 — MHz f = 100MHz Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz VCE = -5V, IC = -200µA, Noise Figure NF — — 10 dB Rg = 2.0kΩf = 1.0kHz, f = 200Hz Note: 7. Short duration pulse test used to minimize self-heating effect. -1,000 -0.5 IC I = 10 B R -0.4 E ) N T I V T ( A I E G -100 M E G T - A N R T -0.3 E O L R T O R C V U E N C L L OI T = 25°C °C C O T A -0.2 D A C , -10 , R T = 150°C °C A E ) T U Fh A T S( A E S C -0.1 V T = -50°C °C A -1 0 -1 -10 -100 -1,000 -0.1 -1 -10 -100 -1,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 6. Typical DC Current Gain vs. Collector Current Figure 7. Typical Collector-Emitter Saturation Voltage (BC857B Type) vs. Collector Current (BC857B Type) -1,000 ) f = 1MHz z H M( TC ) U F D p( O E R C P N H A T T 10 -100 I DI C Cibo A W P D A N C A 6 B- NI A G Cobo ,f t -10 -1 -10 -100 V , REVERSE VOLTAGE (V) I , COLLECTOR CURRENT (mA) C R Figure 8. Typical Capacitance Characteristics (BC857B Type) Figure 9. Typical Gain-Bandwidth Product vs. Collector Current (BC857B Type) BC847PN 4 of 6 June 2016 Document number: DS30278 Rev. 14 - 2
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(@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -50 — — V IC = -100µA Collector-Emitter Breakdown Voltage BVCEO -45 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -6 — — V IE = -100µA DC Current Gain hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA -75 -300 I Collector-Emitter Saturation Voltage V C = -10mA, IB = -0.5mA CE(SAT) — mV -250 -650 IC = -100mA, IB = -5.0mA -700 — I Base-Emitter Saturation Voltage V C = -10mA, IB = -0.5mA BE(SAT) — mV -850 -950 IC = -100mA, IB = -5.0mA -600 -650 -750 V Base-Emitter Voltage V CE = -5.0V, IC = -2.0mA BE(ON) — mV — -820 VCE = -5.0V, IC = -10mA — — -15 nA V Collector-Cutoff Current CB = -30V ICBO — — -4.0 µA VCB = -30V, TA = +150°C V Gain Bandwidth Product f CE = -5.0V, IC = -10mA, T 100 200 — MHz f = 100MHz Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz VCE = -5V, IC = -200µA, Noise Figure NF — — 10 dB Rg = 2.0kΩf = 1.0kHz, f = 200Hz Note: 7. Short duration pulse test used to minimize self-heating effect. -1,000 -0.5 IC I = 10 B R -0.4 E ) N T I V T ( A I E G -100 M E G T - A N R T -0.3 E O L R T O R C V U E N C L L OI T = 25°C °C C O T A -0.2 D A C , -10 , R T = 150°C °C A E ) T U Fh A T S( A E S C -0.1 V T = -50°C °C A -1 0 -1 -10 -100 -1,000 -0.1 -1 -10 -100 -1,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 6. Typical DC Current Gain vs. Collector Current Figure 7. Typical Collector-Emitter Saturation Voltage (BC857B Type) vs. Collector Current (BC857B Type) -1,000 ) f = 1MHz z H M( TC ) U F D p( O E R C P N H A T T 10 -100 I DI C Cibo A W P D A N C A 6 B- NI A G Cobo ,f t -10 -1 -10 -100 V , REVERSE VOLTAGE (V) I , COLLECTOR CURRENT (mA) C R Figure 8. Typical Capacitance Characteristics (BC857B Type) Figure 9. Typical Gain-Bandwidth Product vs. Collector Current (BC857B Type) BC847PN 4 of 6 June 2016 Document number: DS30278 Rev. 14 - 2
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© Diodes Incorporated
