Datasheet AL8861Q (Diodes) - 3

AL8861Q Absolute Maximum Rating
s (Note 5)
Symbol Parameter Rating Unit
VIN Input Voltage -0.3 to 42 V VLX ,VISENSE LX, ISENSE Pin Voltage -0.3 to 42 V VVSET VSET Pin Voltage -0.3 to 6 V TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -65 to +150 °C

TLEAD Lead Temperature (Soldering, 10s) +260 °C
T
Note: 5. Stresses greater than those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, and
C
functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied.
U
Exposure to Absolute Maximum Ratings for extended periods can affect device reliability.
D O ESD Ratings
(Note 6)
R P Symbol Parameter Rating Unit W
Human Body Model (HBM), Per AEC-Q100-002 ±3000
E
VESD V Charged Device Model (CDM), Per AEC-Q100-011 ±1000
N
Note: 6. AEC-Q100-002 indicates that HBM stressing shall be accordance with the ANSI/ESDA/JEDEC JS-001 specification.
Recommended Operating Conditions Symbol Parameter Min Max Unit
VIN Input Voltage 4.5 40 V fSW Switching Frequency — 1 MHz IOUT Continuous Output Current — 1.5 A Voltage Range for 10% to 100% DC Dimming VVSET 0.4 2.5 V Relative to GND Pin Voltage High for PWM Dimming with Respect to VVSET_HIGH 2.6 5.5 V GND Pin Voltage Low for PWM Dimming Relative to GND VVSET_LOW 0 0.3 V Pin TA Operating Ambient Temperature -40 +125 °C
Thermal Information
(Note 7)
Symbol Parameter Rating Unit
θJA Junction-to-Ambient Thermal Resistance 56 °C/W θJC Junction-to-Case (Top) Thermal Resistance 15 °C/W Note: 7. Device mounted on 2"*2" FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. AL8861Q 3 of 15 May 2019 Document number: DS41798 Rev. 2 - 2
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