Datasheet SiSS22DN (Vishay) - 3
| Manufacturer | Vishay |
| Description | N-Channel 60 V (D-S) MOSFET |
| Pages / Page | 7 / 3 — SiSS22DN. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| File Format / Size | PDF / 199 Kb |
| Document Language | English |
SiSS22DN. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
Model Line for this Datasheet
Text Version of Document
SiSS22DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 150 V = 10 V thru 6 V GS 80 120 ) V = 5 V GS 60 90 rrent (A ne rrent (A ne u u C n n C 2nd li 40 2nd li rai 60 D Drai T = 25 °C - - C I D I D 20 30 V = 4 V T = 125 °C T = -55 °C GS C C 0 0 0 1 2 3 4 5 0 2 4 6 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS 2nd line 2nd line
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.0050 10000 10 000 10000 0.0044 C Ω) iss V = 7.5 V GS 1000 1000 1000 0.0038 stance ( C ne ne ne ne oss ne ne -Resi n 1st li 2nd li 1st li 0.0032 2nd li 2nd li 2nd li apacitance (pF) -O 100 C 100 C 100 ) rss n V = 10 V - GS C DS(o 0.0026 R 0.0020 10 10 10 0 18 36 54 72 90 0 12 24 36 48 60 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS 2nd line 2nd line
On-Resistance vs. Drain Current and Gate Voltage Capacitance
Axis Title Axis Title 10 10000 2.1 10000 I = 10 A ) D ed) V = 10 V, I = 10 A (V GS D 8 liz a 1.8 ltage orm o 1000 1000 6 1.5 ne ne ne ne ne ne ource V tance (N V = 15 V, 30 V, 45 V s DS 1st li 1st li 2nd li 4 2nd li 2nd li 1.2 2nd li 100 V = 7.5 V, I = 10 A 100 GS D ate-to-S n-Resi G O - 2 - 0.9 GS (on) V S DR 0 10 0.6 10 0 6 12 18 24 30 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J 2nd line 2nd line
Gate Charge On-Resistance vs. Junction Temperature
S18-0729-Rev. A, 23-Jul-2018
3
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 100 150 V = 10 V thru 6 V GS 80 120 ) V = 5 V GS 60 90 rrent (A ne rrent (A ne u u C n n C 2nd li 40 2nd li rai 60 D Drai T = 25 °C - - C I D I D 20 30 V = 4 V T = 125 °C T = -55 °C GS C C 0 0 0 1 2 3 4 5 0 2 4 6 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS 2nd line 2nd line
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.0050 10000 10 000 10000 0.0044 C Ω) iss V = 7.5 V GS 1000 1000 1000 0.0038 stance ( C ne ne ne ne oss ne ne -Resi n 1st li 2nd li 1st li 0.0032 2nd li 2nd li 2nd li apacitance (pF) -O 100 C 100 C 100 ) rss n V = 10 V - GS C DS(o 0.0026 R 0.0020 10 10 10 0 18 36 54 72 90 0 12 24 36 48 60 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS 2nd line 2nd line
On-Resistance vs. Drain Current and Gate Voltage Capacitance
Axis Title Axis Title 10 10000 2.1 10000 I = 10 A ) D ed) V = 10 V, I = 10 A (V GS D 8 liz a 1.8 ltage orm o 1000 1000 6 1.5 ne ne ne ne ne ne ource V tance (N V = 15 V, 30 V, 45 V s DS 1st li 1st li 2nd li 4 2nd li 2nd li 1.2 2nd li 100 V = 7.5 V, I = 10 A 100 GS D ate-to-S n-Resi G O - 2 - 0.9 GS (on) V S DR 0 10 0.6 10 0 6 12 18 24 30 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J 2nd line 2nd line
Gate Charge On-Resistance vs. Junction Temperature
S18-0729-Rev. A, 23-Jul-2018
3
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
