Datasheet SiSS22DN (Vishay) - 6
| Manufacturer | Vishay |
| Description | N-Channel 60 V (D-S) MOSFET |
| Pages / Page | 7 / 6 — SiSS22DN. TYPICAL CHARACTERISTICS. Normalized Thermal Transient … |
| File Format / Size | PDF / 199 Kb |
| Document Language | English |
SiSS22DN. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient
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SiSS22DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 0.2 ransient Notes: 1000 T e v 0.1 PDM ne ne pedance 0.1 m ffecti l I 0.05 t1 1st li a 2nd li t2 ed E t 1. Duty cycle, D = 1 100 herm t2 aliz 0.02 T 2. Per unit base = R = 63 °C/W thJA 3. T - T = P Z (t) JM A DM thJA Norm Single pulse 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) 2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ransient 1000 T e v 0.2 ne ne pedance m ffecti l I 1st li a 2nd li 0.1 ed E 100 erm h aliz T 0.05 0.02 Norm Single pulse 0.1 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77889. S18-0729-Rev. A, 23-Jul-2018
6
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 1 10000 Duty cycle = 0.5 0.2 ransient Notes: 1000 T e v 0.1 PDM ne ne pedance 0.1 m ffecti l I 0.05 t1 1st li a 2nd li t2 ed E t 1. Duty cycle, D = 1 100 herm t2 aliz 0.02 T 2. Per unit base = R = 63 °C/W thJA 3. T - T = P Z (t) JM A DM thJA Norm Single pulse 4. Surface mounted 0.01 10 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) 2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title 1 10000 Duty cycle = 0.5 ransient 1000 T e v 0.2 ne ne pedance m ffecti l I 1st li a 2nd li 0.1 ed E 100 erm h aliz T 0.05 0.02 Norm Single pulse 0.1 10 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77889. S18-0729-Rev. A, 23-Jul-2018
6
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
