Datasheet IL3685P (NVE) - 2
| Manufacturer | NVE |
| Description | High-Speed Isolated 3.3V Bus RS-485 Transceiver |
| Pages / Page | 13 / 2 — IL3685P. Absolute Maximum Ratings. Parameter. Symbol Min. Typ. Max. … |
| File Format / Size | PDF / 507 Kb |
| Document Language | English |
IL3685P. Absolute Maximum Ratings. Parameter. Symbol Min. Typ. Max. Units. Test. Conditions. Recommended Operating Conditions
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IL3685P Absolute Maximum Ratings
(11)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Storage Temperature T −55 150 °C S Junction Temperature TJ −55 150 °C Ambient Operating Temperature T −40 85 °C A Voltage Range at A or B Bus Pins −7 12 V Supply Voltage(1) VDD1, VDD2 −0.5 7 V Digital Input Voltage −0.5 V + 0.5 V DD Digital Output Voltage −0.5 V + 1 V DD ESD (all bus nodes) 15 kV HBM
Recommended Operating Conditions Parameter Symbol Min. Typ. Max. Units Test Conditions
V 3.0 5.5 Supply Voltage DD1 V V 4.5 5.5 DD2 Junction Temperature TJ −40 110 °C 2.4 V High-Level Digital Input Voltage V V DD1 = 3.3 V IH 3.0 DD1 V VDD1 = 5.0 V Low-Level Digital Input Voltage V 0 0.8 V IL Differential Input Voltage(2) V +12 / −7 V ID High-Level Output Current (Driver) I 60 mA OH High-Level Digital Output Current I 8 mA (Receiver) OH Low-Level Output Current (Driver) I −60 mA OL Low-Level Digital Output Current I −8 mA (Receiver) OL Data Rate = 40 Mbps; Ambient Operating Temperature T −40 85 °C A R = 54 Ω L Digital Input Signal Rise and Fall Times t , t DC Stable IR IF
Insulation Specifications Parameter Symbol Min. Typ. Max. Units Test Conditions
Creepage Distance (external) 8.03 8.3 mm Per IEC 60601 Total Barrier Thickness (internal) 0.013 0.016 mm Barrier Resistance R >1014 Ω 500 V IO Barrier Capacitance C 7 pF f = 1 MHz IO Leakage Current 0.2 μA 240 V , 60 Hz RMS RMS Comparative Tracking Index CTI ≥600 V Per IEC 60112 RMS High Voltage Endurance AC 1000 V RMS At maximum (Maximum Barrier Voltage V IO operating temperature for Indefinite Life) DC 1500 V DC Surge Immunity (“V” Version) VIOSM 12.8 kV Per IEC 61000-4-5 PK 100°C, 1000 V , 60% Barrier Life 44000 Years RMS CL activation energy
Thermal Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions
Junction–Ambient Thermal θ Resistance 31 °C/W Soldered to double- JA sided board; Junction–Case (Top) θ 17 free air °C/W Thermal Resistance JT Power Dissipation P 800 mW D 2 NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 YouTube.com/NveCorporation ©NVE Corporation
(11)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Storage Temperature T −55 150 °C S Junction Temperature TJ −55 150 °C Ambient Operating Temperature T −40 85 °C A Voltage Range at A or B Bus Pins −7 12 V Supply Voltage(1) VDD1, VDD2 −0.5 7 V Digital Input Voltage −0.5 V + 0.5 V DD Digital Output Voltage −0.5 V + 1 V DD ESD (all bus nodes) 15 kV HBM
Recommended Operating Conditions Parameter Symbol Min. Typ. Max. Units Test Conditions
V 3.0 5.5 Supply Voltage DD1 V V 4.5 5.5 DD2 Junction Temperature TJ −40 110 °C 2.4 V High-Level Digital Input Voltage V V DD1 = 3.3 V IH 3.0 DD1 V VDD1 = 5.0 V Low-Level Digital Input Voltage V 0 0.8 V IL Differential Input Voltage(2) V +12 / −7 V ID High-Level Output Current (Driver) I 60 mA OH High-Level Digital Output Current I 8 mA (Receiver) OH Low-Level Output Current (Driver) I −60 mA OL Low-Level Digital Output Current I −8 mA (Receiver) OL Data Rate = 40 Mbps; Ambient Operating Temperature T −40 85 °C A R = 54 Ω L Digital Input Signal Rise and Fall Times t , t DC Stable IR IF
Insulation Specifications Parameter Symbol Min. Typ. Max. Units Test Conditions
Creepage Distance (external) 8.03 8.3 mm Per IEC 60601 Total Barrier Thickness (internal) 0.013 0.016 mm Barrier Resistance R >1014 Ω 500 V IO Barrier Capacitance C 7 pF f = 1 MHz IO Leakage Current 0.2 μA 240 V , 60 Hz RMS RMS Comparative Tracking Index CTI ≥600 V Per IEC 60112 RMS High Voltage Endurance AC 1000 V RMS At maximum (Maximum Barrier Voltage V IO operating temperature for Indefinite Life) DC 1500 V DC Surge Immunity (“V” Version) VIOSM 12.8 kV Per IEC 61000-4-5 PK 100°C, 1000 V , 60% Barrier Life 44000 Years RMS CL activation energy
Thermal Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions
Junction–Ambient Thermal θ Resistance 31 °C/W Soldered to double- JA sided board; Junction–Case (Top) θ 17 free air °C/W Thermal Resistance JT Power Dissipation P 800 mW D 2 NVE Corporation 11409 Valley View Road, Eden Prairie, MN 55344-3617 Phone: (952) 829-9217 YouTube.com/NveCorporation ©NVE Corporation
