Datasheet LT8609S (Analog Devices) - 3

ManufacturerAnalog Devices
Description42V, 2A/3A Peak Synchronous Step-Down Regulator with 2.5μA Quiescent Current
Pages / Page24 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply …
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ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating

ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating

Text Version of Document

link to page 2 LT8609S
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS
Minimum Input Voltage 3.0 V l 2.7 3.2 VIN Quiescent Current VEN/UV = 0V, VSYNC = 0V 1 5 µA VEN/UV = 2V, Not Switching, VSYNC = 0V, VIN ≤ 36V l 1.7 12 µA VIN Current in Regulation VIN = 6V, VOUT = 2.7V, Output Load = 100µA l 46 90 µA VIN = 6V, VOUT = 2.7V, Output Load = 1mA l 480 700 µA Feedback Reference Voltage VIN = 6V, ILOAD = 100mA 0.770 0.774 0.778 V VIN = 6V, ILOAD = 100mA l 0.758 0.774 0.794 V Feedback Voltage Line Regulation VIN = 4.0V to 40V l 0.02 0.06 %/V Feedback Pin Input Current VFB = 1V l ±20 nA Minimum On-Time ILOAD = 1.5A, SYNC = 0V l 45 75 ns ILOAD = 1.5A, SYNC = 1.9V l 45 60 ns Minimum Off Time 90 130 ns Oscillator Frequency RT = 221k, ILOAD = 0.5A l 155 200 245 kHz RT = 60.4k, ILOAD = 0.5A l 640 700 760 kHz RT = 18.2k, ILOAD = 0.5A l 1.925 2.00 2.075 MHz Top Power NMOS On-Resistance ILOAD = 1A 185 mΩ Top Power NMOS Current Limit l 3.4 4.75 5.7 A Bottom Power NMOS On-Resistance 115 mΩ SW Leakage Current VIN = 42V, VSW = 40V 5 µA EN/UV Pin Threshold EN/UV Rising l 0.99 1.05 1.11 V EN/UV Pin Hysteresis 50 mV EN/UV Pin Current VEN/UV = 2V l ±20 nA PG Upper Threshold Offset from VFB VFB Rising l 5.0 8.5 13.0 % PG Lower Threshold Offset from VFB VFB Falling l 5.0 8.5 13.0 % PG Hysteresis 0.5 % PG Leakage VPG = 42V l ±200 nA PG Pull-Down Resistance VPG = 0.1V 550 1200 Ω Sync Low Input Voltage l 0.4 0.9 V Sync High Input Voltage INTVCC = 3.5V l 2.7 3.2 V TR/SS Source Current l 1 2 3 µA TR/SS Pull-Down Resistance Fault Condition, TR/SS = 0.1V 300 900 Ω Spread Spectrum Modulation Frequency VSYNC = 3.3V 0.5 3 6 kHz
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 3:
This IC includes overtemperature protection that is intended to may cause permanent damage to the device. Exposure to any Absolute protect the device during overload conditions. Junction temperature will Maximum Rating condition for extended periods may affect device exceed 150°C when overtemperature protection is active. Continuous reliability and lifetime. Absolute Maximum Ratings are those values beyond operation above the specified maximum operating junction temperature which the life of a device may be impaired. will reduce lifetime.
Note 2:
The LT8609SE is guaranteed to meet performance specifications from 0°C to 125°C junction temperature. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization, and correlation with statistical process controls. The LT8609SI is guaranteed over the full –40°C to 125°C operating junction temperature range. Rev. A For more information www.analog.com 3 Document Outline Features Applications Typical Application Description Absolute Maximum Ratings Order Information Pin Configuration Electrical Characteristics Typical Performance Characteristics Pin Functions Block Diagram Operation Applications Information Typical Applications Package Description Revision History Typical Application Related Parts
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