Datasheet BYV29 (Philips)

ManufacturerPhilips
DescriptionRectifier diodes ultrafast
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Philips Semiconductors. Product specification. Rectifier diodes. BYV29 series. ultrafast. FEATURES. SYMBOL. QUICK REFERENCE DATA

Datasheet BYV29 Philips

Model Line for this Datasheet

BYV29

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Philips Semiconductors Product specification Rectifier diodes BYV29 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V = 300 V/ 400 V/ 500 V R • Fast switching • Soft recovery characteristic k a V ≤ 1.03 V F • High thermal cycling performance 1 2 • Low thermal resistance I = 9 A F(AV) t ≤ 60 ns rr
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
PIN DESCRIPTION
intended for use as output rectifiers tab in high frequency switched mode 1 cathode power supplies. 2 anode The BYV29 series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. 1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV29 -300 -400 -500
V Peak repetitive reverse voltage - 300 400 500 V RRM V Crest working reverse voltage - 300 400 500 V RWM V Continuous reverse voltage - 300 400 500 V R I Average forward current1 square wave; δ = 0.5; - 9 A F(AV) T ≤ 123 ˚C mb I Repetitive peak forward current t = 25 µs; δ = 0.5; - 18 A FRM T ≤ 123 ˚C mb I Non-repetitive peak forward t = 10 ms - 100 A FSM current. t = 8.3 ms - 110 A sinusoidal; with reapplied VRRM(max) T Storage temperature -40 150 ˚C stg T Operating junction temperature - 150 ˚C j
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R Thermal resistance junction to - - 2.5 K/W th j-mb mounting base R Thermal resistance junction to in free air. - 60 - K/W th j-a ambient
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Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Document Outline FEATURES SYMBOL QUICK REFERENCE DATA GENERAL DESCRIPTION PINNING LIMITING VALUES THERMAL RESISTANCES ELECTRICAL CHARACTERISTICS PACKAGE OUTLINE DEFINITIONS