Datasheet SPD50P03L G (Infineon) - 5
| Manufacturer | Infineon |
| Description | OptiMOS -P Power-Transistor |
| Pages / Page | 9 / 5 — SPD50P03L G. 5 Typ. output characteristics. 6 Typ. drain-source on … |
| Revision | 01_09 |
| File Format / Size | PDF / 395 Kb |
| Document Language | English |
SPD50P03L G. 5 Typ. output characteristics. 6 Typ. drain-source on resistance. 200. 180. 160. 140. 120. [A] 100. (on). DS [V]. D [A]
Model Line for this Datasheet
Text Version of Document
SPD50P03L G 5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
200 15
-10 V -5 V
180
-4.5 V
160
-4 V
140 10
-4.5 V
] 120
Ω -5.5 V
[m [A] 100
-3.5 V
D (on) -I DS 80 R 5
V 6-
60
-3 V -6.5 V -7 V
40
-10 V -2.5 V
20 0 0 0 2 4 6 8 10 0 40 80 120 160 200 -V DS [V] -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
80 100
C °25
70 60
C °175
80 50 60 [A] 40 [S] D-I fsg 30 40 20 20 10 0 0 0 1 2 3 4 0 20 40 60 -V GS [V] -I D [A]
Rev. 1.9 page 5 2012-09-13 Document Outline Untitled
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
200 15
-10 V -5 V
180
-4.5 V
160
-4 V
140 10
-4.5 V
] 120
Ω -5.5 V
[m [A] 100
-3.5 V
D (on) -I DS 80 R 5
V 6-
60
-3 V -6.5 V -7 V
40
-10 V -2.5 V
20 0 0 0 2 4 6 8 10 0 40 80 120 160 200 -V DS [V] -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
80 100
C °25
70 60
C °175
80 50 60 [A] 40 [S] D-I fsg 30 40 20 20 10 0 0 0 1 2 3 4 0 20 40 60 -V GS [V] -I D [A]
Rev. 1.9 page 5 2012-09-13 Document Outline Untitled
