Datasheet TB67B000AHG (Toshiba) - 9

ManufacturerToshiba
DescriptionBi-CMOS Power Integrated Circuit Multi-Chip Package (MCP). High voltage 3-Phase Full-Wave PWM Brushless Motor Driver
Pages / Page31 / 9 — Electrical Characteristics (Ta = 25°C)
File Format / SizePDF / 460 Kb
Document LanguageEnglish

Electrical Characteristics (Ta = 25°C)

Electrical Characteristics (Ta = 25°C)

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TB67B000AHG
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit IBB VBB = 450 V ― ― 0.5 Current dissipation mA ICC VCC = 15 V ― 5 10 Current consumption of IBS (ON) VBS = 5 V, high-side ON ― 90 150 μA bootstrap IBS (OFF) VBS = 5 V, high-side OFF ― 80 140 IIN(LA) Vin = 5 V, LA ― 25 50 IIN(VSP) Vin = 5 V, VSP ― 35 70 Input current μA IIN(Idc) Vin = GND, Idc ― -25 -50 IIN(1) Vin = 5 V, CW/CCW, FGC, SS ― 50 100 V H refout ― Vrefout V - 1 IN1 CW/CCW, SS V L 0 ― 0.8 H 4 ― Vrefout VIN2 M FGC 2 ― 3 V L 0 ― 1 Test mode for motor shipping T 8.2 ― 10 SS = H PWM ON duty 95% H 5.1 5.4 5.7 SS = H V V Input voltage SP(H) Refresh → Start motor operation, M 1.8 2.1 2.4 SS = H Turned-off → Refresh L 0.7 1.0 1.3 SS = H Test mode for motor shipping T 8.2 ― 10 SS = L PWM ON duty 92% H 5.1 5.4 5.7 SS = L VSP(L) V Refresh → Start motor operation, M 1.8 2.1 2.4 SS = L Turned-off → Refresh L 0.7 1.0 1.3 SS = L PWM oscillation frequency FC (20) OSC/R = 68 kΩ 18 20 22 kHz (Carrier frequency) FC (18) OSC/R = 75 kΩ 16.2 18 19.8 TONTR TR = 0.01 μF Driving time (Note ) 3.33 5 8.33 s Motor lock detection TOFFTR TR = 0.01 μF Turn off time (Note ) 20 30 46.15 s FTR TR = 0.01 μF frequency 65 100 150 Hz LA = 0 V or open, Hall IN = 100 Hz TLAH(0) ― 0 ― SS = H LA = 2.5 V, Hall IN = 100 Hz Lead angle offset (LA) TLAH(2.5) 11.25 15 18.75 ° SS = H LA = 5 V, Hall IN = 100 Hz TLAH (5) 26.25 28.125 ― SS = H LA = 0 V or Open, Hall IN = 100 Hz TLAL(0) ― 0 ― SS = L LA = 2.5 V, Hall IN = 100 Hz Lead angle offset TLAL (2.5) 26 30 33 ° SS = L LA = 5 V, Hall IN = 100 Hz TLAL (5) 52 57 60 SS = L Input V sensitivity S Difference input 40 ― ― mVpp In-phase Hall device input V range W ― 0.5 ― 4.0 V Input VH hysteresis (1) (Note) ±1.5 ±7.5 ±13.5 mV 9 2019-05-30 Document Outline TOSHIBA Bi-CMOS Power Integrated Circuit Multi-Chip Package (MCP) High voltage 3-Phase Full-Wave PWM Brushless Motor Driver Features Block Diagram Pin Assignment Pin Description Input/Output Equivalent Circuits Absolute Maximum Ratings (Ta = 25 C) Operating conditions (Ta = 25 C) Power Dissipation Electrical Characteristics (Ta = 25 C) Functional Description 1. Basic Operation 2. Voltage Command (VSP) Signal and Bootstrap Voltage Regulation 3. Dead Time Insertion (cross conduction protection) 4. Lead Angle Control 5. PWM Carrier Frequency 6. Position Detecting Pin <Hall device input> <Hall IC input> 7. Rotating Pulse Output Timing Chart of FG Signal 8. Protection-related Functions 9. Motor-lock detection Timing Chart Timing Chart 1: Output waveform of sine-wave PWM drive Timing Chart 2: Output waveform of sine-wave PWM drive Timing Chart 3: Output waveform of wide-angle commutation Timing Chart 4: Output waveform of wide-angle commutation Timing Chart 5: Output waveform of square-wave drive Timing Chart 6: Output waveform of square-wave drive Timing Chart 7: Output waveform of square-wave drive Timing Chart 8: Output waveform of square-wave drive Application Circuit Example External Parts Package Dimensions Notes on Contents IC Usage Considerations Notes on handling of ICs PD MAX – Ta 40 Power dissipation PD MAX (W) 30 20 10 0 0 25 50 75 100 125 150 Ambient temperature Ta ( C) ① INFINITE HEAT SINK : R(j-c = 1 C/W ② When mounted on the board (74.2 × 114.3 × 1.6 mm, Cu20%), HEAT SINK (10 × 10 × 1 mm, Cu) : R(j-a = 17 C/W ③ When mounted on the board (74.2 × 114.3 × 1.6 mm, Cu20%) : R(j-a = 35 C/W ④ IC only : R(j-a = 53 C/W PWM Duty (1) (2) (3) 92% 2.1 V 1.0 V 5.4 V VSP (4) 7.3 V 8.2 V 10 V (1) (2) (3) 2.1 V 1.0 V 5.4 V VSP (4) 7.3 V 8.2 V 10 V PWM Duty (Upper phase) *95% (typ.) *2.4% (typ.) RESTRICTIONS ON PRODUCT USE
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