Datasheet BC846, BC847, BC848, BC850 (ON Semiconductor) - 2
| Manufacturer | ON Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Pages / Page | 6 / 2 — BC846 / BC847 / BC848 / BC850 —. Absolute Maximum Ratings. Symbol. … |
| Revision | 2 |
| File Format / Size | PDF / 310 Kb |
| Document Language | English |
BC846 / BC847 / BC848 / BC850 —. Absolute Maximum Ratings. Symbol. Parameter. Value. Unit. NPN. Epit. axia. l Silicon T
Model Line for this Datasheet
BC846
BC847
BC850
Text Version of Document
BC846 / BC847 / BC848 / BC850 — Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
BC846 80 VCBO Collector-Base Voltage BC847 / BC850 50 V BC848 30 BC846 65 VCEO Collector-Emitter Voltage BC847 / BC850 45 V BC848 30 BC846 / BC847 6
NPN
VEBO Emitter-Base Voltage V BC848 / BC850 5 IC Collector Current (DC) 100 mA
Epit
TJ Junction Temperature 150 °C
axia
TSTG Storage Temperature Range -65 to +150 °C
l Silicon T Thermal Characteristics
(2) Values are at TA = 25°C unless otherwise noted.
ransistor Symbol Parameter Value Unit
Power Dissipation 310 mW PD Derate Above 25°C 2.48 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
BC846 80 VCBO Collector-Base Voltage BC847 / BC850 50 V BC848 30 BC846 65 VCEO Collector-Emitter Voltage BC847 / BC850 45 V BC848 30 BC846 / BC847 6
NPN
VEBO Emitter-Base Voltage V BC848 / BC850 5 IC Collector Current (DC) 100 mA
Epit
TJ Junction Temperature 150 °C
axia
TSTG Storage Temperature Range -65 to +150 °C
l Silicon T Thermal Characteristics
(2) Values are at TA = 25°C unless otherwise noted.
ransistor Symbol Parameter Value Unit
Power Dissipation 310 mW PD Derate Above 25°C 2.48 mW/°C RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2
