Datasheet STW88N65M5, STWA88N65M5 (STMicroelectronics) - 7
| Manufacturer | STMicroelectronics |
| Description | N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages |
| Pages / Page | 16 / 7 — STW88N65M5, STWA88N65M5. Electrical characteristics. Figure 8. … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
STW88N65M5, STWA88N65M5. Electrical characteristics. Figure 8. Capacitance variations
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STW88N65M5, STWA88N65M5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
C AM10397v1 Eoss AM10398v1 (pF) (µJ) 40 100000 35 10000 Ciss 30 25 1000 20 Coss 100 15 10 10 Crss 5 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)
Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs temperature temperature
VGS(th) AM04972v1 RDS(on) AM05501v2 (norm) (norm) ID=250µA 1.10 2.1 ID= 42 A 1.9 VGS= 10 V 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)
Figure 12. Source-drain diode forward Figure 13. Normalized V(BR)DSS vs temperature characteristics
V AM04974v1 AM10399v1 SD V(BR)DSS (V) (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 0.6 1.00 TJ=150°C 0.98 0.4 0.96 0.2 0.94 0 0.92 0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) DocID022522 Rev 5 7/16 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history
C AM10397v1 Eoss AM10398v1 (pF) (µJ) 40 100000 35 10000 Ciss 30 25 1000 20 Coss 100 15 10 10 Crss 5 1 0 0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)
Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs temperature temperature
VGS(th) AM04972v1 RDS(on) AM05501v2 (norm) (norm) ID=250µA 1.10 2.1 ID= 42 A 1.9 VGS= 10 V 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 0.5 -50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 125 TJ(°C)
Figure 12. Source-drain diode forward Figure 13. Normalized V(BR)DSS vs temperature characteristics
V AM04974v1 AM10399v1 SD V(BR)DSS (V) (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 0.6 1.00 TJ=150°C 0.98 0.4 0.96 0.2 0.94 0 0.92 0 10 20 30 40 50 ISD(A) -50 -25 0 25 50 75 100 TJ(°C) DocID022522 Rev 5 7/16 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On /off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package mechanical data Figure 21. TO-247 drawing Table 8. TO-247 mechanical data Figure 22. TO-247 long leads drawing Table 9. TO-247 long leads mechanical data 5 Revision history Table 10. Document revision history
