Datasheet BC817DPN (Nexperia) - 4
| Manufacturer | Nexperia |
| Description | NPN/PNP general purpose transistor |
| Pages / Page | 9 / 4 — Nexperia. BC817DPN. NPN/PNP general purpose transistor |
| Revision | 27112019 |
| File Format / Size | PDF / 223 Kb |
| Document Language | English |
Nexperia. BC817DPN. NPN/PNP general purpose transistor
Model Line for this Datasheet
Text Version of Document
Nexperia BC817DPN NPN/PNP general purpose transistor
mbl749 103 mbl750 1200 VBE (mV) VCEsat 1000 (mV) (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 10 200 10- 1 1 10 102 103 10- 1 1 10 102 103 IC (mA) IC (mA) IC/IB = 10 VCE = 1 V (1) Tamb = 150°C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C
Fig. 3. TR1 (NPN): Collector-emitter saturation voltage Fig. 4. TR1 (NPN): Base-emitter voltage as a function as a function of collector current; typical values of collector current; typical values
mhc324 MHC325 600 -1000 h I FE IC B (mA) = -7 -6.3 (mA) -5.6 500 (1) -800 -4.9 -4.2 400 -3.5 -600 -2.8 300 (2) -2.1 -400 200 -1.4 (3) 100 -200 -0.7 0 0 - 10- 1 - 1 - 10 - 102 - 103 0 -2 -4 -6 -8 -10 IC (mA) VCE (V) VCE = -1 V Tamb = 25 °C (1) Tamb = 150 °C (2) T
Fig. 6. TR2 (PNP): Collector current as a function of
amb = 25 °C (3) T
collector-emitter voltage; typical values
amb = −55 °C
Fig. 5. TR2 (PNP): DC current gain as a function of collector current; typical values
BC817DPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 4 / 9
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
mbl749 103 mbl750 1200 VBE (mV) VCEsat 1000 (mV) (1) 800 (2) 102 600 (1) (3) (2) 400 (3) 10 200 10- 1 1 10 102 103 10- 1 1 10 102 103 IC (mA) IC (mA) IC/IB = 10 VCE = 1 V (1) Tamb = 150°C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = -55 °C (3) Tamb = 150 °C
Fig. 3. TR1 (NPN): Collector-emitter saturation voltage Fig. 4. TR1 (NPN): Base-emitter voltage as a function as a function of collector current; typical values of collector current; typical values
mhc324 MHC325 600 -1000 h I FE IC B (mA) = -7 -6.3 (mA) -5.6 500 (1) -800 -4.9 -4.2 400 -3.5 -600 -2.8 300 (2) -2.1 -400 200 -1.4 (3) 100 -200 -0.7 0 0 - 10- 1 - 1 - 10 - 102 - 103 0 -2 -4 -6 -8 -10 IC (mA) VCE (V) VCE = -1 V Tamb = 25 °C (1) Tamb = 150 °C (2) T
Fig. 6. TR2 (PNP): Collector current as a function of
amb = 25 °C (3) T
collector-emitter voltage; typical values
amb = −55 °C
Fig. 5. TR2 (PNP): DC current gain as a function of collector current; typical values
BC817DPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 4 / 9
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
