Datasheet DN3545 (Microchip) - 5
| Manufacturer | Microchip |
| Description | N-Channel Depletion-Mode Vertical DMOS FET |
| Pages / Page | 14 / 5 — DN3545. (Normalized). DSS. T (OC). I (Amperes). FIGURE 2-7:. FIGURE … |
| File Format / Size | PDF / 1.8 Mb |
| Document Language | English |
DN3545. (Normalized). DSS. T (OC). I (Amperes). FIGURE 2-7:. FIGURE 2-10:. (normalized). (Amperes). I D. GS(OFF). DS(ON). (Volts). FIGURE 2-8:
Model Line for this Datasheet
Text Version of Document
DN3545
1.2 50 I = 100µA V = 0V D GS V = -5.0V GS 40 1.1 30 1.0 (ohms)
(Normalized)
DS(ON) 20
DSS
R
BV
0.9 10 0.8 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8
T (OC) j I (Amperes) D FIGURE 2-7:
BVDSS Variation with
FIGURE 2-10:
On-Resistance vs. Drain Temperature. Current. 1.0 1.5 2.4 V = 10V DS T = -55OC A 0.8 1.3 2.0 0.6 T = 25OC 1.1 1.6 A V @ 10µA GS(OFF)
(normalized) (normalized) (Amperes)
0.9 1.2
I D
0.4 T = 125OC A
GS(OFF) DS(ON) V R
0.2 0.7 0.8 R @ 0V, 150mA DS(ON) 0 0.5 0.4 -3 -2 -1 0 1 2 -50 0 50 100 150
V (Volts) T (OC) GS J FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
VGS(th) and RDS(ON) Variation with Temperature. 3 300 V = -5.0V GS I = 150mA D 2 V = 30V DS 250 1 200 0
(volts)
-1 150
GS V
C -2 ISS
C (picofarads)
100 -3 50 -4 COSS CRSS -5 0 0 1 2 3 4 5 6 0 10 20 30 40
Q (nanocoulombs) V (Volts) G DS FIGURE 2-9:
Capacitance vs. Drain-to-
FIGURE 2-12:
Gate Drive Dynamic Source Voltage. Characteristics. 2018 Microchip Technology Inc. DS20005438A-page 5 Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS(ON) Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: 3-lead TO-92 Pin Function Table TABLE 3-2: 3-lead SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham
1.2 50 I = 100µA V = 0V D GS V = -5.0V GS 40 1.1 30 1.0 (ohms)
(Normalized)
DS(ON) 20
DSS
R
BV
0.9 10 0.8 0 -50 0 50 100 150 0 0.2 0.4 0.6 0.8
T (OC) j I (Amperes) D FIGURE 2-7:
BVDSS Variation with
FIGURE 2-10:
On-Resistance vs. Drain Temperature. Current. 1.0 1.5 2.4 V = 10V DS T = -55OC A 0.8 1.3 2.0 0.6 T = 25OC 1.1 1.6 A V @ 10µA GS(OFF)
(normalized) (normalized) (Amperes)
0.9 1.2
I D
0.4 T = 125OC A
GS(OFF) DS(ON) V R
0.2 0.7 0.8 R @ 0V, 150mA DS(ON) 0 0.5 0.4 -3 -2 -1 0 1 2 -50 0 50 100 150
V (Volts) T (OC) GS J FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
VGS(th) and RDS(ON) Variation with Temperature. 3 300 V = -5.0V GS I = 150mA D 2 V = 30V DS 250 1 200 0
(volts)
-1 150
GS V
C -2 ISS
C (picofarads)
100 -3 50 -4 COSS CRSS -5 0 0 1 2 3 4 5 6 0 10 20 30 40
Q (nanocoulombs) V (Volts) G DS FIGURE 2-9:
Capacitance vs. Drain-to-
FIGURE 2-12:
Gate Drive Dynamic Source Voltage. Characteristics. 2018 Microchip Technology Inc. DS20005438A-page 5 Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS(ON) Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: 3-lead TO-92 Pin Function Table TABLE 3-2: 3-lead SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham
