Datasheet IRIS4015 (International Rectifier) - 3
| Manufacturer | International Rectifier |
| Description | Integrated Switcher |
| Pages / Page | 6 / 3 — IRIS4015(K). Electrical Characteristics (for Control Part (MIC)). Symbol. … |
| File Format / Size | PDF / 66 Kb |
| Document Language | English |
IRIS4015(K). Electrical Characteristics (for Control Part (MIC)). Symbol. Definition. Min. Typ. Max. Units Test Conditions
Model Line for this Datasheet
Text Version of Document
IRIS4015(K) Electrical Characteristics (for Control Part (MIC))
VCC = 18V, (TA = 25°C) unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
VCCUV+ VCC supply undervoltage positive going threshold 14.4 16 17.6 V VCCHYS VCC supply undervoltage lockout hysteresis 5.4 6.0 6.6 IQCCUV UVLO mode quiescent current — — 100 µA VCC < VCCUV- IQCC Quiescent operating VCC supply current — — 30 mA TOFF(MAX) Maximum OFF time 40 — 60 T µ TH(2) Minimum input pulse width for quasi resonant signals — — 1.0 sec TOFF(MIN) Minimum OFF time — — 1.5 VTH(1) OCP/FB terminal threshold voltage 1 0.68 0.73 0.78 V VTH(2) OCP/FB terminal threshold voltage 2 1.3 1.45 1.6 IOCP/FB OCP/FB terminal sink current 1.1 1.35 1.7 mA VCC(OVP) VCC overvoltage protection limit 20.5 22.5 24.5 V IIN(H) Latch circuit sustaining current — — 400 µA VIN(LaOFF) Latch circuit reset voltage 6.6 — 8.4 V TJ(TSD) Thermal shutdown activation temperature 140 — — oC
Electrical Characteristics (for MOSFET)
(TA = 25°C) unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
VDSS Drain-to-source breakdown voltage 650 — — V IDSS Drain leakage current — — 25 µA Vds=650V, VGS=0V RDS(ON) On-resistance — — 0.97 Ω V3-1=10V, ID=8.8A tr Rise time (10% to 90%) — — 310 ns THj-C Thermal resistance — — 0.53 oC/W Between junction and case www.irf.com 3
VCC = 18V, (TA = 25°C) unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
VCCUV+ VCC supply undervoltage positive going threshold 14.4 16 17.6 V VCCHYS VCC supply undervoltage lockout hysteresis 5.4 6.0 6.6 IQCCUV UVLO mode quiescent current — — 100 µA VCC < VCCUV- IQCC Quiescent operating VCC supply current — — 30 mA TOFF(MAX) Maximum OFF time 40 — 60 T µ TH(2) Minimum input pulse width for quasi resonant signals — — 1.0 sec TOFF(MIN) Minimum OFF time — — 1.5 VTH(1) OCP/FB terminal threshold voltage 1 0.68 0.73 0.78 V VTH(2) OCP/FB terminal threshold voltage 2 1.3 1.45 1.6 IOCP/FB OCP/FB terminal sink current 1.1 1.35 1.7 mA VCC(OVP) VCC overvoltage protection limit 20.5 22.5 24.5 V IIN(H) Latch circuit sustaining current — — 400 µA VIN(LaOFF) Latch circuit reset voltage 6.6 — 8.4 V TJ(TSD) Thermal shutdown activation temperature 140 — — oC
Electrical Characteristics (for MOSFET)
(TA = 25°C) unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
VDSS Drain-to-source breakdown voltage 650 — — V IDSS Drain leakage current — — 25 µA Vds=650V, VGS=0V RDS(ON) On-resistance — — 0.97 Ω V3-1=10V, ID=8.8A tr Rise time (10% to 90%) — — 310 ns THj-C Thermal resistance — — 0.53 oC/W Between junction and case www.irf.com 3
