Preliminary Datasheet ZHB6790 (Diodes) - 7

ManufacturerDiodes
DescriptionSM-8 Bipolar Transistor H-Bridge
Pages / Page8 / 7 — ZHB6790. SAFE. OPERATING. AREA. 10. 10. 1. 1. DC. DC. 1s. 1s. 100m. …
File Format / SizePDF / 203 Kb
Document LanguageEnglish

ZHB6790. SAFE. OPERATING. AREA. 10. 10. 1. 1. DC. DC. 1s. 1s. 100m. 100ms. 100m. 100ms. 10ms. 10ms. 1ms. 1ms. 100µs. 100µs. 10m. 10m. 100m. 1. 10. 100. 100m. 1. 10. 100. VCE. -. Collector

ZHB6790 SAFE OPERATING AREA 10 10 1 1 DC DC 1s 1s 100m 100ms 100m 100ms 10ms 10ms 1ms 1ms 100µs 100µs 10m 10m 100m 1 10 100 100m 1 10 100 VCE - Collector

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ZHB6790 SAFE OPERATING AREA 10 10 1 1 DC DC 1s 1s 100m 100ms 100m 100ms 10ms 10ms 1ms 1ms 100µs 100µs 10m 10m 100m 1 10 100 100m 1 10 100 VCE - Collector Emitter Voltage (V) VCE - Collector Emitter Voltage (V) Safe Operating Area (Full Copper) Safe Operating Area (Minimum Copper) see note below see note below Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when mounted on a 50mm x 50mm FR4 PCB. The two cases show: i) full copper present and ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to the edge of the PCB. For example, on a 50mm x 50mm full copper PCB, the ZHB6790 will safely dissipate 2W under DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can be tolerated for pulsed operation, while the shorter pulse widths (100µs and 1ms) being relevant for assessment of switching conditions. The ZHB6790 ’H’-Bridge can be modelled within SPICE using the following transistor models configured in the standard ’H’-Bridge topology, as shown in the schematic diagram of this datasheet. ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97 .MODEL H6790N NPN IS =2.505E-12 NF =1.0058 BF =1360 IKF=1.3 VAF=35 +ISE=.24E-12 NE =1.38 NR =1.001 BR =125 IKR=1 VAR=8 ISC=.435E-12 +NC =1.213 RB =.2 RE =.043 RC =.04 CJC=54.3E-12 MJC=.475 VJC=.765 +CJE=247E-12 TF =.851E-9 TR =15.7E-9 * * *ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97 .MODEL H6790P PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 VAF=23.5 +ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30 +ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12 +MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 * (C) 1997 ZETEX PLC The copyright in these models and the design embodied belong to Zetex PLC (“Zetex”). They are supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,
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