Datasheet AD8515 (Analog Devices) - 4

AD8515 Data Sheet
VS = 3.0 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS VCM = VS/2 1 6 mV −40°C < TA < +125°C 8 mV Input Bias Current IB VS = 3.0 V 2 30 pA −40°C < TA < +85°C 600 pA −40°C < TA < +125°C 8 nA Input Offset Current IOS 1 10 pA −40°C < TA < +125°C 500 pA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 3.0 V 54 dB −40°C < TA < +125°C 50 dB Large Signal Voltage Gain AVO RL = 100 kΩ, 0.3 V ≤ VOUT ≤ 2.7 V 250 1000 V/mV Offset Voltage Drift ΔVOS/ΔT 4 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 100 μA, −40°C < TA < +125°C 2.99 V IL = 750 μA, −40°C < TA < +125°C 2.98 V Output Voltage Low VOL IL = 100 μA, −40°C < TA < +125°C 10 mV IL = 750 μA, −40°C < TA < +125°C 20 mV POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 1.8 V to 5.0 V 65 85 dB −40°C < TA < +125°C 57 80 dB Supply Current/Amplifier ISY VOUT = VS/2 350 450 μA −40°C < TA < +125°C 500 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 2.7 V/µs Gain Bandwidth Product GBP 5 MHz NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 22 nV/√Hz f = 10 kHz 20 nV/√Hz Current Noise Density in f = 1 kHz 0.05 pA/√Hz Rev. E | Page 4 of 16 Document Outline FEATURES APPLICATIONS PIN CONFIGURATION GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION POWER CONSUMPTION vs. BANDWIDTH DRIVING CAPACITIVE LOADS FULL POWER BANDWIDTH A MICROPOWER REFERENCE VOLTAGE GENERATOR A 100 kHz SINGLE-SUPPLY SECOND-ORDER BAND-PASS FILTER WIEN BRIDGE OSCILLATOR OUTLINE DIMENSIONS ORDERING GUIDE