Datasheet TPD4162F (Toshiba) - 8
| Manufacturer | Toshiba |
| Description | High Voltage Monolithic Silicon Power IC |
| Pages / Page | 15 / 8 — TPD4162F. 8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum … |
| File Format / Size | PDF / 763 Kb |
| Document Language | English |
TPD4162F. 8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum Ratings. Characteristics. Symbol. Rating. Unit
Model Line for this Datasheet
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TPD4162F 8. Absolute Maximum Ratings Table 8.1 Absolute Maximum Ratings
(Ta = 25°C unless otherwise specified)
Characteristics Symbol Rating Unit
VBB 600 V Power supply voltage VCC 20 V Output current (DC) Iout 0.7 A Output current (pulse) Ioutp 1.2 A Input voltage (except VS) VIN -0.5 to VREG + 0.5 V Input voltage (only VS) VVS 8.2 V VREG current IREG 50 mA FG voltage VFG 6 V FG current IFG 20 mA Power dissipation (Tc = 25°C) PC 20 W Operating junction temperature Tjopr -40 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
8.1. Safe Operating Area
0.7 ) (A rent ur ng c indi w eak P 0 0 450 Power supply voltage VBB (V)
Figure8.1 SOA at Tj = 135 °C
© 2 020 8 2020-02-20 Toshiba Electronic Devices & Storage Corporation
(Ta = 25°C unless otherwise specified)
Characteristics Symbol Rating Unit
VBB 600 V Power supply voltage VCC 20 V Output current (DC) Iout 0.7 A Output current (pulse) Ioutp 1.2 A Input voltage (except VS) VIN -0.5 to VREG + 0.5 V Input voltage (only VS) VVS 8.2 V VREG current IREG 50 mA FG voltage VFG 6 V FG current IFG 20 mA Power dissipation (Tc = 25°C) PC 20 W Operating junction temperature Tjopr -40 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
8.1. Safe Operating Area
0.7 ) (A rent ur ng c indi w eak P 0 0 450 Power supply voltage VBB (V)
Figure8.1 SOA at Tj = 135 °C
© 2 020 8 2020-02-20 Toshiba Electronic Devices & Storage Corporation
