Datasheet SiZF300DT (Vishay) - 5
| Manufacturer | Vishay |
| Description | Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode |
| Pages / Page | 13 / 5 — SiZF300DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Source-Drain Diode Forward … |
| File Format / Size | PDF / 265 Kb |
| Document Language | English |
SiZF300DT. CHANNEL-1 TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
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SiZF300DT
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.015 10000 I = 7 A D T = 150 °C J ) 0.012 ) Ω (A 10 1000 1000 rrent 0.009 u ne ne T = 125 °C ine J ne ne T = 25 °C ine J Resistance ( 1st li 2nd li 2nd l 1st li 2nd l n- 0.006 2nd li ource C O 1 100 S - 100 - (on) I S S D 0.003 R T = 25 °C J 0.1 10 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS 2nd line 2nd line
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 2.0 10000 50 10000 1.8 40 1.6 1000 1000 ) (V 30 ) I = 250 μA D ne ne ine ne ne (th 1.4 r (W e GSV 1st li w 2nd li 1st li 2nd l o 20 2nd li P 1.2 100 100 10 1.0 0.8 10 0 10 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T - Temperature (°C) Time (s) J 2nd line 2nd line
Threshold Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 1000 10000 I Limited by R (1) DM Limited ID(ON) Limited DS(on) 100 ) 1000 100 μs 10 rrent (A ine u 1 ms C n 2nd l 1 rai 10 ms D 100 - 100 ms I D 1s 0.1 10 s T = 25 °C DC A Single pulse BVdss Limited 0.01 10 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS (1) V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area, Junction-to-Ambient
S18-0479-Rev. A, 30-Apr-2018
5
Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.015 10000 I = 7 A D T = 150 °C J ) 0.012 ) Ω (A 10 1000 1000 rrent 0.009 u ne ne T = 125 °C ine J ne ne T = 25 °C ine J Resistance ( 1st li 2nd li 2nd l 1st li 2nd l n- 0.006 2nd li ource C O 1 100 S - 100 - (on) I S S D 0.003 R T = 25 °C J 0.1 10 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS 2nd line 2nd line
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 2.0 10000 50 10000 1.8 40 1.6 1000 1000 ) (V 30 ) I = 250 μA D ne ne ine ne ne (th 1.4 r (W e GSV 1st li w 2nd li 1st li 2nd l o 20 2nd li P 1.2 100 100 10 1.0 0.8 10 0 10 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 T - Temperature (°C) Time (s) J 2nd line 2nd line
Threshold Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 1000 10000 I Limited by R (1) DM Limited ID(ON) Limited DS(on) 100 ) 1000 100 μs 10 rrent (A ine u 1 ms C n 2nd l 1 rai 10 ms D 100 - 100 ms I D 1s 0.1 10 s T = 25 °C DC A Single pulse BVdss Limited 0.01 10 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS (1) V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area, Junction-to-Ambient
S18-0479-Rev. A, 30-Apr-2018
5
Document Number: 76288 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
