Datasheet SiSS94DN (Vishay)
| Manufacturer | Vishay |
| Description | N-Channel 200 V (D-S) MOSFET |
| Pages / Page | 7 / 1 — SiSS94DN. N-Channel 200 V (D-S) MOSFET. FEATURES. PowerPAK® 1212-8S. … |
| File Format / Size | PDF / 195 Kb |
| Document Language | English |
SiSS94DN. N-Channel 200 V (D-S) MOSFET. FEATURES. PowerPAK® 1212-8S. APPLICATIONS. PRODUCT SUMMARY. ORDERING INFORMATION
Model Line for this Datasheet
Text Version of Document
SiSS94DN
www.vishay.com Vishay Siliconix
N-Channel 200 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S
D • TrenchFET® with ThunderFET technology D 8 D 7 optimizes balance of R D DS(on), Qg, Qsw, and Qoss 6 5 • Leadership RDS(on) • 100 % Rg and UIS tested • Material categorization: for definitions of 3.3 mm 3.3 1 compliance please see www.vishay.com/doc?99912 mm 2 S 3 S 1 mm 4 S
APPLICATIONS
D 3.3 mm 3.3 G Top View Bottom View • Primary side switching • Synchronous rectification
PRODUCT SUMMARY
V • DC/DC topologies DS (V) 200 G RDS(on) max. () at VGS = 10 V 0.075 • Lighting RDS(on) max. () at VGS = 7.5 V 0.078 • Load switch Qg typ. (nC) 11 • Boost converter S ID (A) 19.5 N-Channel MOSFET Configuration Single • Motor drive control
ORDERING INFORMATION
Package PowerPAK 1212-8S Lead (Pb)-free and halogen-free SiSS94DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 200 V Gate-source voltage VGS ± 20 TC = 25 °C 19.5 TC = 70 °C 15.6 Continuous drain current (TJ = 150 °C) ID TA = 25 °C 5.4 b, c TA = 70 °C 4.3 b, c A Pulsed drain current (t = 100 μs) IDM 25 T 19.5 Continuous source-drain diode current C = 25 °C IS TA = 25 °C 4.2 b, c Single pulse avalanche current I L = 0.1 mH AS 10 Single pulse avalanche energy EAS 5 mJ TC = 25 °C 65.8 T Maximum power dissipation C = 70 °C 42.1 PD W TA = 25 °C 5.1 b, c TA = 70 °C 3.2 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 20 25 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W S19-0849-Rev. A, 07-Oct-2019
1
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
N-Channel 200 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S
D • TrenchFET® with ThunderFET technology D 8 D 7 optimizes balance of R D DS(on), Qg, Qsw, and Qoss 6 5 • Leadership RDS(on) • 100 % Rg and UIS tested • Material categorization: for definitions of 3.3 mm 3.3 1 compliance please see www.vishay.com/doc?99912 mm 2 S 3 S 1 mm 4 S
APPLICATIONS
D 3.3 mm 3.3 G Top View Bottom View • Primary side switching • Synchronous rectification
PRODUCT SUMMARY
V • DC/DC topologies DS (V) 200 G RDS(on) max. () at VGS = 10 V 0.075 • Lighting RDS(on) max. () at VGS = 7.5 V 0.078 • Load switch Qg typ. (nC) 11 • Boost converter S ID (A) 19.5 N-Channel MOSFET Configuration Single • Motor drive control
ORDERING INFORMATION
Package PowerPAK 1212-8S Lead (Pb)-free and halogen-free SiSS94DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 200 V Gate-source voltage VGS ± 20 TC = 25 °C 19.5 TC = 70 °C 15.6 Continuous drain current (TJ = 150 °C) ID TA = 25 °C 5.4 b, c TA = 70 °C 4.3 b, c A Pulsed drain current (t = 100 μs) IDM 25 T 19.5 Continuous source-drain diode current C = 25 °C IS TA = 25 °C 4.2 b, c Single pulse avalanche current I L = 0.1 mH AS 10 Single pulse avalanche energy EAS 5 mJ TC = 25 °C 65.8 T Maximum power dissipation C = 70 °C 42.1 PD W TA = 25 °C 5.1 b, c TA = 70 °C 3.2 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient b t 10 s RthJA 20 25 °C/W Maximum junction-to-case (drain) Steady state RthJC 1.5 1.9
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 65 °C/W S19-0849-Rev. A, 07-Oct-2019
1
Document Number: 77350 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
