Datasheet HMC559-DIE (Analog Devices)

ManufacturerAnalog Devices
DescriptionWideband Power Amplifier Chip, DC - 20 GHz
Pages / Page8 / 1 — HMC559. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 20 GHz. Typical …
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HMC559. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 20 GHz. Typical Applications. Features. Functional Diagram. General Description

Datasheet HMC559-DIE Analog Devices

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HMC559
v03.0208
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz Typical Applications Features
The HMC559 wideband PA is ideal for: P1dB Output Power: +28 dBm • Telecom Infrastructure Gain: 14 dB 3 • Microwave Radio & VSAT Output IP3: +36 dBm • Military & Space Supply Voltage: +10V @ 400 mA • Test Instrumentation 50 Ohm Matched Input/Output IP • Fiber Optics Die Size: 3.12 x 1.50 x 0.1 mm H
Functional Diagram General Description
The HMC559 is a GaAs MMIC PHEMT Distributed S - C Power Amplifi er die which operates between DC and R 20 GHz. The amplifi er provides 14 dB of gain, IE +36 dBm output IP3 and +28 dBm of output power IF at 1 dB gain compression while requiring 400 mA L from a +10V supply. Gain fl atness is slightly posi- P tive from 4 to 20 GHz making the HMC559 ideal for M EW, ECM and radar driver amplifi er applications. The HMC559 amplifi er I/O’s are internally matched to R A 50 Ohms facilitating integration into Multi-Chip-Mod- E ules (MCMs). All data is taken with the chip connected W via two 0.075mm (3 mil) ribbon bonds of minimal length O 0.31mm (12 mils). R & P A E IN
Electrical Specifi cations, T = +25° C, Vdd= +10V, Vgg2= +4V, Idd= 400 mA*
L
A
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range DC - 6 6 - 12 12 - 20 GHz Gain 11 13 11 13.5 11.5 14 dB Gain Flatness ±0.5 ±0.5 ±1.5 dB Gain Variation Over Temperature 0.01 0.02 0.01 0.02 0.02 0.03 dB/ °C Input Return Loss 22 15 13 dB Output Return Loss 16 16 8 dB Output Power for 1 dB Compression (P1dB) 25 28 24.5 27.5 23 27 dBm Saturated Output Power (Psat) 30 29 28.5 dBm Output Third Order Intercept (IP3) 37 36 33 dBm Noise Figure 4.5 3.5 4.5 dB Supply Current 400 400 400 mA (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) * Adjust Vgg1 between -2 to 0V to achieve Idd= 400 mA typical. Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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