Datasheet STD30NF06LT4 (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package |
| Pages / Page | 19 / 3 — STD30NF06LT4. Electrical ratings. 1 Electrical. ratings. Table 2. … |
| File Format / Size | PDF / 878 Kb |
| Document Language | English |
STD30NF06LT4. Electrical ratings. 1 Electrical. ratings. Table 2. Absolute maximum ratings. Symbol. Parameter. Value. Unit
Text Version of Document
STD30NF06LT4 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit
V Drain-source voltage 60 V DS V Gate-source voltage ± 20 V GS V Drain-gate voltage (R = 20 kΩ) 60 V DGR GS I Drain current (continuous) at T = 25 °C 35 A D C I Drain current (continuous) at T = 100 °C 25 A D C (1) I Drain current (pulsed) 140 A DM P Total dissipation at T = 25 °C 70 W TOT C Derating factor 0.47 W/°C (2) dv/dt Peak diode recovery voltage slope 25 V/ns T Storage temperature stg - 55 to 175 °C T Max. operating junction temperature j 1. Pulse width limited by safe operating area 2. I ≤ 35 A, di/dt ≤ 400 A/μs, V ≤ V SD DS(peak) (BR)DSS
Table 3. Thermal data Symbol Parameter Value Unit
R Thermal resistance junction-case max 2.14 °C/W thj-case R Thermal resistance junction-amb max 100 °C/W thj-amb
Table 4. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not I 35 A AR repetitive (pulse width limited by T ) jmax Single pulse avalanche energy E 150 mJ AS (starting T =25°C, I = I ; V =50 V) j D AR DD DocID026310 Rev 1 3/19 19 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On /off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Source-drain diode forward characteristics 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 4 Package mechanical data Figure 19. DPAK (TO-252) type A drawing Table 9. DPAK (TO-252) type A mechanical data Figure 20. DPAK (TO-252) type A footprint Figure 21. DPAK (TO-252) type C drawing Table 10. DPAK (TO-252) type C mechanical data Figure 22. DPAK (TO-252) type A footprint 5 Packaging mechanical data Figure 23. Tape for DPAK (TO-252) Figure 24. Reel for DPAK (TO-252) Table 11. DPAK (TO-252) tape and reel mechanical data 6 Revision history Table 12. Document revision history
V Drain-source voltage 60 V DS V Gate-source voltage ± 20 V GS V Drain-gate voltage (R = 20 kΩ) 60 V DGR GS I Drain current (continuous) at T = 25 °C 35 A D C I Drain current (continuous) at T = 100 °C 25 A D C (1) I Drain current (pulsed) 140 A DM P Total dissipation at T = 25 °C 70 W TOT C Derating factor 0.47 W/°C (2) dv/dt Peak diode recovery voltage slope 25 V/ns T Storage temperature stg - 55 to 175 °C T Max. operating junction temperature j 1. Pulse width limited by safe operating area 2. I ≤ 35 A, di/dt ≤ 400 A/μs, V ≤ V SD DS(peak) (BR)DSS
Table 3. Thermal data Symbol Parameter Value Unit
R Thermal resistance junction-case max 2.14 °C/W thj-case R Thermal resistance junction-amb max 100 °C/W thj-amb
Table 4. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not I 35 A AR repetitive (pulse width limited by T ) jmax Single pulse avalanche energy E 150 mJ AS (starting T =25°C, I = I ; V =50 V) j D AR DD DocID026310 Rev 1 3/19 19 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data Table 4. Avalanche characteristics 2 Electrical characteristics Table 5. On /off states Table 6. Dynamic Table 7. Switching times Table 8. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Source-drain diode forward characteristics 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 4 Package mechanical data Figure 19. DPAK (TO-252) type A drawing Table 9. DPAK (TO-252) type A mechanical data Figure 20. DPAK (TO-252) type A footprint Figure 21. DPAK (TO-252) type C drawing Table 10. DPAK (TO-252) type C mechanical data Figure 22. DPAK (TO-252) type A footprint 5 Packaging mechanical data Figure 23. Tape for DPAK (TO-252) Figure 24. Reel for DPAK (TO-252) Table 11. DPAK (TO-252) tape and reel mechanical data 6 Revision history Table 12. Document revision history
