Datasheet 2N3439, 2N3440 (STMicroelectronics)
| Manufacturer | STMicroelectronics |
| Description | SILICON NPN TRANSISTORS |
| Pages / Page | 4 / 1 — 2N3439. 2N3440. DESCRIPTION. TO-39. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE … |
| File Format / Size | PDF / 48 Kb |
| Document Language | English |
2N3439. 2N3440. DESCRIPTION. TO-39. INTERNAL SCHEMATIC DIAGRAM. ABSOLUTE MAXIMUM RATINGS. Symbol. Parameter. Value. Unit
Model Line for this Datasheet
Text Version of Document
2N3439
®
2N3440
SILICON NPN TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR
DESCRIPTION
The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440
VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A IB Base Current 0.5 A Ptot Total Dissipation at Tc ≤ 25 oC 10 W Ptot Total Dissipation at Tamb ≤ 50 oC 1 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC December 2000 1/4
®
2N3440
SILICON NPN TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR
DESCRIPTION
The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.
TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N3439 2N3440
VCBO Collector-Base Voltage (IE = 0) 450 300 V VCEO Collector-Emitter Voltage (IB = 0) 350 250 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 1 A IB Base Current 0.5 A Ptot Total Dissipation at Tc ≤ 25 oC 10 W Ptot Total Dissipation at Tamb ≤ 50 oC 1 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC December 2000 1/4
