Datasheet SQJA81EP (Vishay) - 3
| Manufacturer | Vishay |
| Description | Automotive P-Channel 80 V (D-S) 175 °C MOSFET |
| Pages / Page | 9 / 3 — SQJA81EP. TYPICAL CHARACTERISTICS. Output Characteristics. … |
| File Format / Size | PDF / 235 Kb |
| Document Language | English |
SQJA81EP. TYPICAL CHARACTERISTICS. Output Characteristics. Transconductance. On-Resistance vs. Drain Current. Capacitance
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SQJA81EP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 75 10000 T = -55 °C V = 10 V thru 7 V C T = 25 °C GS C 120 ) 60 ) V = 6 V GS 1000 1000 90 45 rrent (A ne ne ine u ne ne ine T = 125 °C C C n 1st li 2nd li 2nd l 1st li 2nd li 60 2nd l rai 30 D V = 5 V GS 100 - ransconductance (S 100 T I D - 30 fsg 15 V = 4 V GS 0 10 0 10 0 2 4 6 8 10 0 12 24 36 48 60 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D
Output Characteristics Transconductance
Axis Title Axis Title 0.10 10000 10 000 10000 ) 0.08 Ciss Ω 1000 1000 1000 (pF) 0.06 Coss ne ne ne ine ne ine tance 1st li n-Resistance ( 2nd li 1st li 2nd l 2nd li 0.04 2nd l O apaci - V = 4.5 V C GS 100 100 100 (on) C - S D 0.02 V = 10 V R GS Crss 0.00 10 10 10 0 15 30 45 60 75 0 16 32 48 64 80 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
Axis Title Axis Title 125 10000 10 10000 I = 10 A, D ) V = 40 V DS 100 (V 8 ) 1000 ltage o 1000 75 6 rrent (A ne ne ine u ne ne ine C ource V n T = 25 °C C 1st li 2nd li 2nd l 1st li 2nd li 50 rai 2nd l 4 D 100 - 100 ate-to-S I D G 25 - 2 T = 125 °C GS C V T = -55 °C C 0 10 0 10 0 2 4 6 8 10 0 12 24 36 48 60 V - Gate-to-Source Voltage (V) Q - Total Gate Charge (nC) GS g
Transfer Characteristics Gate Charge
S20-0012-Rev. A, 27-Jan-2020
3
Document Number: 77266 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 75 10000 T = -55 °C V = 10 V thru 7 V C T = 25 °C GS C 120 ) 60 ) V = 6 V GS 1000 1000 90 45 rrent (A ne ne ine u ne ne ine T = 125 °C C C n 1st li 2nd li 2nd l 1st li 2nd li 60 2nd l rai 30 D V = 5 V GS 100 - ransconductance (S 100 T I D - 30 fsg 15 V = 4 V GS 0 10 0 10 0 2 4 6 8 10 0 12 24 36 48 60 V - Drain-to-Source Voltage (V) I - Drain Current (A) DS D
Output Characteristics Transconductance
Axis Title Axis Title 0.10 10000 10 000 10000 ) 0.08 Ciss Ω 1000 1000 1000 (pF) 0.06 Coss ne ne ne ine ne ine tance 1st li n-Resistance ( 2nd li 1st li 2nd l 2nd li 0.04 2nd l O apaci - V = 4.5 V C GS 100 100 100 (on) C - S D 0.02 V = 10 V R GS Crss 0.00 10 10 10 0 15 30 45 60 75 0 16 32 48 64 80 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
Axis Title Axis Title 125 10000 10 10000 I = 10 A, D ) V = 40 V DS 100 (V 8 ) 1000 ltage o 1000 75 6 rrent (A ne ne ine u ne ne ine C ource V n T = 25 °C C 1st li 2nd li 2nd l 1st li 2nd li 50 rai 2nd l 4 D 100 - 100 ate-to-S I D G 25 - 2 T = 125 °C GS C V T = -55 °C C 0 10 0 10 0 2 4 6 8 10 0 12 24 36 48 60 V - Gate-to-Source Voltage (V) Q - Total Gate Charge (nC) GS g
Transfer Characteristics Gate Charge
S20-0012-Rev. A, 27-Jan-2020
3
Document Number: 77266 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
