Datasheet BUK455-60A, BUK455-60B (Philips)
| Manufacturer | Philips |
| Description | PowerMOS Transistor |
| Pages / Page | 7 / 1 — Philips Semiconductors. Product Specification. PowerMOS transistor. … |
| File Format / Size | PDF / 59 Kb |
| Document Language | English |
Philips Semiconductors. Product Specification. PowerMOS transistor. BUK455-60A/B. GENERAL DESCRIPTION. QUICK REFERENCE DATA. SYMBOL
Model Line for this Datasheet
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Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a plastic envelope.
BUK455 -60A -60B
The device is intended for use in V Drain-source voltage 60 60 V DS Switched Mode Power Supplies I Drain current (DC) 41 38 A D (SMPS), motor control, welding, P Total power dissipation 125 125 W tot DC/DC and AC/DC converters, and T Junction temperature 175 175 ˚C j in automotive and general purpose R Drain-source on-state 0.038 0.045 Ω DS(ON) switching applications. resistance
PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION
d tab 1 gate 2 drain g 3 source tab drain 1 2 3 s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V Drain-source voltage - - 60 V DS V Drain-gate voltage R = 20 kΩ - 60 V DGR GS ±V Gate-source voltage - - 30 V GS
-60A -60B
I Drain current (DC) T = 25 ˚C - 41 38 A D mb I Drain current (DC) T = 100 ˚C - 29 27 A D mb I Drain current (pulse peak value) T = 25 ˚C - 164 152 A DM mb P Total power dissipation T = 25 ˚C - 125 W tot mb T Storage temperature - - 55 175 ˚C stg T Junction Temperature - - 175 ˚C j
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R Thermal resistance junction to - - 1.2 K/W th j-mb mounting base R Thermal resistance junction to - 60 - K/W th j-a ambient April 1993 1 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS
N-channel enhancement mode
SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a plastic envelope.
BUK455 -60A -60B
The device is intended for use in V Drain-source voltage 60 60 V DS Switched Mode Power Supplies I Drain current (DC) 41 38 A D (SMPS), motor control, welding, P Total power dissipation 125 125 W tot DC/DC and AC/DC converters, and T Junction temperature 175 175 ˚C j in automotive and general purpose R Drain-source on-state 0.038 0.045 Ω DS(ON) switching applications. resistance
PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION
d tab 1 gate 2 drain g 3 source tab drain 1 2 3 s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V Drain-source voltage - - 60 V DS V Drain-gate voltage R = 20 kΩ - 60 V DGR GS ±V Gate-source voltage - - 30 V GS
-60A -60B
I Drain current (DC) T = 25 ˚C - 41 38 A D mb I Drain current (DC) T = 100 ˚C - 29 27 A D mb I Drain current (pulse peak value) T = 25 ˚C - 164 152 A DM mb P Total power dissipation T = 25 ˚C - 125 W tot mb T Storage temperature - - 55 175 ˚C stg T Junction Temperature - - 175 ˚C j
THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R Thermal resistance junction to - - 1.2 K/W th j-mb mounting base R Thermal resistance junction to - 60 - K/W th j-a ambient April 1993 1 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS
