Datasheet APT40GF120J RD (APT)
| Manufacturer | APT |
| Description | Fast IGBT 1200V 60A |
| Pages / Page | 8 / 1 — APT40GF120JRD. 1200V. 60A. • Low Tail Current. • Ultra Low Leakage … |
| File Format / Size | PDF / 118 Kb |
| Document Language | English |
APT40GF120JRD. 1200V. 60A. • Low Tail Current. • Ultra Low Leakage Current. "UL Recognized". ISOTOP
Model Line for this Datasheet
Text Version of Document
APT40GF120JRD APT40GF120JRD 1200V 60A
Fast IGBT
E E
The Fast IGBT is a new generation of high voltage power IGBTs. Using
G C
Non-Punch Through Technology the Fast IGBT offers superior ruggedness, SOT-227 fast switching speed and low Collector-Emitter On voltage.
• Low Tail Current • Ultra Low Leakage Current "UL Recognized" ISOTOP
®
C • Low Forward Voltage Drop • RBSOA and SCSOA Rated • High Freq. Switching to 20KHz G E MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT40GF120JRD UNIT
VCES Collector-Emitter Voltage 1200 V Volts CGR Collector-Gate Voltage (RGE = 20KΩ) 1200 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 60 IC2 Continuous Collector Current @ TC = 60°C 40 Amps ICM Pulsed Collector Current 1 @ TC = 25°C 150 ILM RBSOA Clamped Inductive Load Current @ Rg = 11Ω TC = 90°C 100 PD Total Power Dissipation 390 Watts TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
VGE(TH) Gate Threshold Voltage (V 4.5 5.5 6.5 CE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (V 2.9 3.4 Volts GE = 15V, IC = 50A, Tj = 25°C) VCE(ON) Collector-Emitter On Voltage (V 3.5 4.1 GE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (V 0.5 CE = VCES, VGE = 0V, Tj = 25°C) ICES mA Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 5.0 I nA GES Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) ±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6256 Rev B 7-2002
Fast IGBT
E E
The Fast IGBT is a new generation of high voltage power IGBTs. Using
G C
Non-Punch Through Technology the Fast IGBT offers superior ruggedness, SOT-227 fast switching speed and low Collector-Emitter On voltage.
• Low Tail Current • Ultra Low Leakage Current "UL Recognized" ISOTOP
®
C • Low Forward Voltage Drop • RBSOA and SCSOA Rated • High Freq. Switching to 20KHz G E MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT40GF120JRD UNIT
VCES Collector-Emitter Voltage 1200 V Volts CGR Collector-Gate Voltage (RGE = 20KΩ) 1200 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 60 IC2 Continuous Collector Current @ TC = 60°C 40 Amps ICM Pulsed Collector Current 1 @ TC = 25°C 150 ILM RBSOA Clamped Inductive Load Current @ Rg = 11Ω TC = 90°C 100 PD Total Power Dissipation 390 Watts TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
VGE(TH) Gate Threshold Voltage (V 4.5 5.5 6.5 CE = VGE, I C = 700µA, Tj = 25°C) Collector-Emitter On Voltage (V 2.9 3.4 Volts GE = 15V, IC = 50A, Tj = 25°C) VCE(ON) Collector-Emitter On Voltage (V 3.5 4.1 GE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (V 0.5 CE = VCES, VGE = 0V, Tj = 25°C) ICES mA Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 5.0 I nA GES Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) ±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6256 Rev B 7-2002
